2005
DOI: 10.1016/j.physb.2005.04.010
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Effect of post-treatment processes on the photoluminescence of porous silicon

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Cited by 13 publications
(5 citation statements)
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“…Furthermore, it was shown that the properties of PS were strongly influenced by the PS surface states, the kind and density of absorbed atoms and the thin oxide layer, as reported in Ref. [34]. When a physical absorption occurs on the surface of the PS, these molecules have the ability to penetrate the pores and should result in serious transformation of the surface states of the PS and then change the emission properties of the PS sample.…”
Section: Article In Pressmentioning
confidence: 84%
“…Furthermore, it was shown that the properties of PS were strongly influenced by the PS surface states, the kind and density of absorbed atoms and the thin oxide layer, as reported in Ref. [34]. When a physical absorption occurs on the surface of the PS, these molecules have the ability to penetrate the pores and should result in serious transformation of the surface states of the PS and then change the emission properties of the PS sample.…”
Section: Article In Pressmentioning
confidence: 84%
“…The most used porous silicon layers, 'PSL' formation method has been the electrochemical method [8,9]. However, the implementation of this technique in a production line of solar cells is quite difficult.…”
Section: Introductionmentioning
confidence: 99%
“…The origin of PS luminescence had been extensively studied, but the luminescent mechanism was not yet solved in the past years. It was believed that photoluminescence (PL) occurred at or near PS surface, but the efficiency and the wavelength range of PS emission was strongly affected by the physical and the electronic properties of PS surface [2]. Therefore, it was necessary to study the influence of the surface-absorption groups on PS emission.…”
Section: Introductionmentioning
confidence: 99%