Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia

Yun, Ji-Hoon; Choi, Eunseok; Jang, Choel-Min; Lee, Choon-Soo

doi:10.1143/jjap.41.l418

Cited by 33 publications

(28 citation statements)

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“…Metal‐organic precursors, such as tetrakis(dimethylamido) [Ti(NMe) 2 ) 4 , TDMAT], tetrakis(diethylamido) [Ti(NEt) 2 ) 4 , TDEAT], and tetrakis(diethylmethylamido) [Ti(NEtMe) 4 , TEMAT] titanium have been used for TiN deposition, and NH 3 has been exclusively used to activate the reaction 44–53. Deposition temperatures ranging from 150 °C to 350 °C have been reported, and the deposited thin films are characteristically amorphous, but with a high content of C, O, and H impurities.…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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Atomic layer deposition (ALD) has become an enabling technology for a wide range of applications where depositions of high quality, conformal thin films are desired. The needs of conducting materials with tailored properties call for ALD metallization processes that can meet diverse requirements in various applications. Recent developments of ALD processes for conducting materials have led to some novel ALD chemistries. Most of the ALD binary materials are formed in a typical AB sequence from two reactants. More complex ternary and doped materials can be achieved according to the same AB sequence principle through nano‐lamination of two binary materials using three or more reactants. It is demonstrated that ternary and elemental materials can be deposited using two reactants with a basic ALD AB sequence. Furthermore, an ALD process is not limited to an AB sequence, an ABC sequence with a surface‐controlled ALD reaction is also possible. A double replacement reaction mechanism is proposed with examples of novel processes such as TaCxNy, WCx, and WNxCy. Recent developments of ALD metallization processes have opened up more opportunities of producing novel ALD materials for industrial applications.

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Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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“…are representative set of precursors for TiN MO-ALD. (54)(55)(56)(57)(58) The growth rates are usually higher than halides based ALD and sometimes close to the ideal value of 1 ML/cycle (or higher).…”

Section: Metal Precursorsmentioning

confidence: 99%

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Kim

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

547

388

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Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of thin metal/nitrides films has increased only recently. This is driven by the need for highly conformal nano-scale thin films in modern semiconductor device manufacturing technology. ALD is a very promising deposition technique with the ability to produce thin films with excellent conformality and compositional control with atomic scale dimensions. However, the application of ALD to metals and nitrides in real semiconductor device processes requires a deeper understanding about the underlying deposition process as well as the physical and electrical properties of the deposited films. This paper reviews the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication.

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“…The C 1s spectra at 282.4 eV reveal on organometallic carbon. 14) The organometallic carbon, as the carbon with ionic properties, constructs easily the cross-link structure. From these results, the bonding structure due to the Si-O bond changes but that due to the carbon does not change with annealing treatment.…”

Section: Resultsmentioning

confidence: 99%

“…Cross-link is considered to promote adhesion since it counterbalances the effect of a weak boundary layer (WBL) at the surface. 14,15) The hydrogen bonding energy is relatively weak compared to the other chemical bonding energy such as ionic bond and covalent bond, but the interaction by charge-transfer is believed to be predominantly electrostatic. 16) The sample with a high amount of oxygen has inorganic properties, namely, high dielectric constant and good hardness.…”

Section: Introductionmentioning

confidence: 99%

Bonding Structure of the Cross-link in Organosilicate Films Using O₂/BTMSM Precursors

Lee

et al. 2003

Jpn. J. Appl. Phys.

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This paper describes a chemical bonding structure of organosilicate films. Organosilicate films were deposited on a p-type Si(100) substrate by inductively coupled plasma chemical vapor deposition (ICPCVD) with rf power of 13.56 MHz. The deposition was performed as a function of O 2 /BTMSM flow rate ratio with a total of 20 sccm. Thereafter, the annealing process was performed at 300 C, 400 C and 500 C in a vacuum. The characteristic analyses of organosilicate films were performed by scanning electron microscopy and X-ray photoelectron spectroscopy (XPS). Organosilicate films in the flow rate ratio of O 2 /BTMSM = 1.5 formed a bond structure of organometallic carbon, which was confirmed by XPS. The characteristics of the organometallic carbon were attributed to a cross-link structure. The dielectric constant of organosilicate films was reduced due to the increase in the carbon concentration. The relative carbon concentration increased due to the vaporization of the H 2 O. Therefore, the dielectric constant of annealed films was smaller than that of as-deposited films.

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Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia

Cited by 33 publications

References 1 publication

Recent Developments of Atomic Layer Deposition Processes for Metallization

Recent Developments of Atomic Layer Deposition Processes for Metallization

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Bonding Structure of the Cross-link in Organosilicate Films Using O₂/BTMSM Precursors

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Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia

Cited by 33 publications

References 1 publication

Recent Developments of Atomic Layer Deposition Processes for Metallization

Recent Developments of Atomic Layer Deposition Processes for Metallization

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Bonding Structure of the Cross-link in Organosilicate Films Using O2/BTMSM Precursors

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Bonding Structure of the Cross-link in Organosilicate Films Using O₂/BTMSM Precursors