Effect of Postoxidation Nitridation on Forward Current–Voltage Characteristics in 4H–SiC Mesa p-n Diodes Passivated With SiO₂

Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization

“…This is considered to be the same phenomenon reported in Ref. [2], i.e. leakage current increasing in forward current-voltage characteristics of mesa p-n diodes caused by post oxidation anneals.…”