Effect of pressure on electrical properties of short period InAs/GaSb superlattice

Abstract

Im enzymgebundenen Zustand bleibt der Dimethylbenzimidazol‐Ligand Coenzym‐B12‐abhängiger Enzyme bei der als „base‐on”︁ bezeichneten Bindungsart an das Cobaltion koordiniert. Für Dioldehydratase aus Salmonella typhimurium wurde nun der direkte, ESR‐spektroskopische Nachweis für die „Base‐on”︁‐Bindung erbracht. Die ESR‐Messungen wurden an Coenzym‐B12 durchgeführt, in dem eines der Stickstoffatome des Dimethylbenzimidazol‐Liganden 15N‐markiert war (siehe schematische Darstellung rechts).

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

“…structures that are very similar to our SPD MWIR samples for both 120 and 190 K [19,[30][31][32]. However, as was pointed by Koncewicz et al [20], despite the change of conductivity character in undoped SL obtained from Hall mobility analysis, no changes in the sign of the Hall effect were reported for lower T. An explanation of such conduction behaviour was proposed by Rao et al [33], where the conductivity type change of an MWIR InAs 8ML /GaSb 8ML sample at about 120 K was interpreted as a change between the dominant contribution of a few near-surface SL wells, with Figure 1. Thermal E a s as a function of temperature T for a few selected internal voltages (D1 diode).…”

“…In this report, we want to partially fill this gap and to present the results of our investigation of deep levels using the very popular single-period T2SL design (SPD), namely InAs 10 ML /GaSb 10 ML [18][19][20]. Knowledge of the position of the trapping state (E t ) in relation to the top of the first heavy hole (HH 1 ) or the bottom of the conduction (C 1 ) subband edges is indispensable for precise modelling of the dark current components due to the GR centres in the depletion zone and TAT.…”

Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode

“…To enhance performances and/or temperature operation, improvements of device technology as well as a better knowledge on fundamental properties of the SL photodiodes are still necessary. In particular, one needs to have a better understanding of carrier transport in this material where a reproducible change in type of conductivity as a function of temperature has been observed by different groups 3,4 . Hall Effect measurement is an efficient way to determine the effective carrier concentration in quantum structure.…”