Effect of pressure on melting temperature of carbon dioxide

Yang, Chun Cheng; Jiang, Q.

doi:10.1016/j.jct.2005.01.006

Cited by 3 publications

(2 citation statements)

References 20 publications

(102 reference statements)

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“…(6) are as follows: Tm = 2327 K [18], Hm = 21.76 KJ g-atom -1 [19],Sm=Hm/Tm=9.35Jg-atom -1 K -1, Sm=Sel+Spos+Svib, Sel is negligibly small, and Spos=-R[xAln(xA)+ xVln(xV)], where xA= 1/(1+ΔVm) and xV=ΔVm /(1+ΔVm) are the molar fractions of the host material and vacancies, respectively [20], and ΔVm is the volume difference between the crystal and corresponding fluid at Tm. As result, Svib= Sm-Spos or Svib  Sm+ R[xAln(xA)+ xVln(xV)] [21]. ΔVm=(VL-VS)/VS, Svib=5.6 Jg-atom -1 K -1 , h = 0.191 nm [18],  = 0.690 Jm -2 , S =3.86×10-12 Pa -1 is determined by  =1/B with B =289.55 GPa being the bulk modulus [21], VS = 5.14 cm3 g-atom [21], VL = 6.16 cm 3 g-atom -1 [18], L =57.9×10-12 Pa -1 as a first-order approximation under higher pressure, we assume L  15S [13].…”

Section: Resultsmentioning

confidence: 99%

“…As result, Svib= Sm-Spos or Svib  Sm+ R[xAln(xA)+ xVln(xV)] [21]. ΔVm=(VL-VS)/VS, Svib=5.6 Jg-atom -1 K -1 , h = 0.191 nm [18],  = 0.690 Jm -2 , S =3.86×10-12 Pa -1 is determined by  =1/B with B =289.55 GPa being the bulk modulus [21], VS = 5.14 cm3 g-atom [21], VL = 6.16 cm 3 g-atom -1 [18], L =57.9×10-12 Pa -1 as a first-order approximation under higher pressure, we assume L  15S [13]. f is calculated through Eq.…”

Section: Resultsmentioning

confidence: 99%

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Semiconductor, Molecular Crystals and Oxide Temperature Pressure Ophase Diagram

Zhang¹,

Chen²

2015

IJHT

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The melting temperature-pressure phase diagram [Tm\(P)-P] for semiconductor, molecular crystals and oxide are predicted through the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. Semiconductor, molecular crystals and oxide have been employed to test the reliability of the model, because of its important role. For Si and Ge, the stable state under normal pressure is the diamond structure (Si-I and Ge-I). Through pressure, this change in the diamond structure for beta -Sn structure (Si-II and Ge-II), and with the increase of temperature, phase I and II are going to be melting into a liquid (L). For the CO2 crystal (commonly known as dry ice), it is a molecular solid with a structure of Pa3 at low temperature and low pressure (CO2-I), and can be widely used for cooling. Al2O3 has been extensively investigated because of its widely ranging industrial applications. This includes applications as a refractory material both of high hardness and stability up to high temperatures, as a support matrix in catalysis. MgO is a material of key importance to earth sciences and solid-state physics: it is one of the most abundant minerals in the Earth and a prototype material for a large group of ionic oxides.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Semiconductor, Molecular Crystals and Oxide Temperature Pressure Ophase Diagram

Zhang¹,

Chen²

2015

IJHT

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Effect of interface on thermodynamic behavior of liquid crystalline type amphiphilic di‐block copolymers

Boyer

Grolier

Yoshida

et al. 2007

J Polym Sci B Polym Phys

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In PEO m -b-PMA(Az) n amphiphilic diblock copolymers, nanoscale structures exhibit an hexagonal-packed PEO m cylinders arrangement. To precisely investigate the role of interfacial interactions between hydrophilic PEO m and hydrophobic PMA(Az) n including mesogene sequences in the side chains, at the isotropic transition, polymer systems are submitted to thermal and barometric effects under hydrostatic pressure. The thermodynamic investigation is based on the original coupled calorimetric-PVT technique, yielding scanning transitiometry. Three phase diagrams can be represented versus pressure: (1) isotropic temperature described by Clapeyron equation (T iso vs. P), (2) change of volume of the system (DV iso vs. P), (3) entropy of the system (DS iso vs. P). In presence of mercury as pressure transmitting fluid, (dT iso /dP) as well as DV iso and DS iso are larger for a PMA(Az) n homopolymer compared to those for the investigated copolymer. Additional calculations of DS iso using thermal and mechanical effects give consistent results. V V C 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45:

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Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

Abdullah,

Omar

2024

Bull Mater Sci

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Effect of pressure on melting temperature of carbon dioxide

Cited by 3 publications

References 20 publications

Semiconductor, Molecular Crystals and Oxide Temperature Pressure Ophase Diagram

Semiconductor, Molecular Crystals and Oxide Temperature Pressure Ophase Diagram

Effect of interface on thermodynamic behavior of liquid crystalline type amphiphilic di‐block copolymers

Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

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