Effect of pressure on the optical absorption in GaP and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="norm

Goi, A. R.; Syassen, K.; Strössner, K.; Cardona, M.

doi:10.1103/physrevb.39.3178

Cited by 44 publications

(27 citation statements)

References 35 publications

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“…45 This is actually what is observed in the inset of Fig. 4, where the energy of the PL peak maximum as a function of pressure is depicted (red circle points) and matches well with a pressure coefficient of À13 meV.GPa material.…”

supporting

confidence: 62%

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Robert

Nestoklon

Silva

et al. 2014

Applied Physics Letters

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The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

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supporting

confidence: 62%

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Robert

Nestoklon

Silva

et al. 2014

Applied Physics Letters

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“…. ,E 4 transition energies, which are much smaller than −13 meV GPa −1 , the value measured for bulk GaP [60]. The situation is completely similar to that found for the InP/GaP QD system [46], where a similar reduction was observed.…”

Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 73%

“…Hence, the observed redshift unambiguously proves that the PL peak involves X-type conduction states in good correlation with TB calculations. This was already discussed in detail in a previous work [35], in which it was noticed that the measured linear variation roughly corresponds to the expected pressure dependence for an X-like level in GaP (−13 meV GPa −1 : the measured pressure coefficient of the indirect X-bandgap in bulk GaP [60]). …”

Section: B Effect Of the Hydrostatic Pressurementioning

confidence: 68%

“…4(b)] shows that the PL maximum red shifts with pressure at a rate of −16.1(6) meV GPa −1 . This is thus stronger than −13 meV GPa −1 , the pressure coefficient we could have expected in first approximation and corresponding to the pressure coefficient of the indirect X-bandgap in bulk GaP [60] [thin red line in Fig. 4(b)].…”

Section: B Effect Of the Hydrostatic Pressurementioning

confidence: 99%

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Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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“…2 as a function of pressure. Whereas the emission from the wetting layer shifts to lower energies at the rate of À13.9(5) meV/GPa typical for the G-X indirect gap of GaP [14], the QD line displays a much smaller pressure coefficient of À4.4(5) meV/GPa. The pressure dependence of the PL peak intensity of the dots is depicted in the inset to Fig.…”

Section: Resultsmentioning

confidence: 96%

High‐pressure photoluminescence study of the electronic structure of InP/GaP quantum dots

Kristukat

Goñi

Hatami

et al. 2003

Physica Status Solidi (b)

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The electronic subband structure of self-assembled InP/GaP quantum dots (QDs) has been investigated by means of photoluminescence (PL) measurements as a function of hydrostatic pressure up to 8 GPa and temperature. At ambient pressure the PL emission of the sample arises from direct optical transitions between the lowest electron and hole G-point states confined in the QDs. At a very low pressure of about 0.15 GPa, the G-X conduction band crossover occurs, after which the PL emission of the dots becomes roughly 20 times weaker in intensity and its energy exhibits the slight redshift typical of indirect recombination processes from the conduction band X valleys. Our results indicate a type-I band alignment for the strained InP/GaP dot structure at low pressure and yield a value of 300 AE 30 meV for the valence-band offset.

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Effect of pressure on the optical absorption in GaP andGaxIn1
A. R. Goi
¹
,
K. Syassen
²
,
K. Strössner
³

et al.

Cited by 44 publications

References 35 publications

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

High‐pressure photoluminescence study of the electronic structure of InP/GaP quantum dots

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Effect of pressure on the optical absorption in GaP andGaxIn1A. R. Goi1, K. Syassen2, K. Strössner3 et al.

Cited by 44 publications

References 35 publications

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

High‐pressure photoluminescence study of the electronic structure of InP/GaP quantum dots

Contact Info

Product

Resources

About

Effect of pressure on the optical absorption in GaP andGaxIn1
A. R. Goi
¹
,
K. Syassen
²
,
K. Strössner
³

et al.