Effect of pressure on the electric-field-induced resistance switching ofVO2planar-type junctions

Abstract

VO 2 thin-film planar-type junctions with the size of 1500 m in width and 10 m in length were fabricated on Al 2 O 3 ͑0001͒ substrates, and the electric-field-induced resistance switching ͑EIRS͒ characteristics were investigated at hydrostatic pressures up to 2 GPa and room temperature. The resistance in the electric-fieldinduced low resistance state ͑E-LRS͒ was revealed to be insensitive to the hydrostatic pressure, in contrast to the apparent suppression of resistance in the temperature-induced low resistance state. The critical current to induce E-LRS is increased as the pressure is increased, while the voltage at the transition is independent of the pressure. These results indicate a picture in VO 2 that not a Joule heating but a reversible breakdown triggers EIRS, and that the electric current of huge density maintains filamentary E-LRS regions.

High-efficiency voltage oscillation in VO2 planer-type junctions with infinite negative differential resistance

“…19 Thus far, the dielectric relaxation and the breakdown phenomena were mainly studied in insulators, rather than in materials with medium resistivity, such as VO 2 ͑1 ⍀ cm at 300 K͒. The classical electronic properties, including dielectric relaxation and breakdown voltage, of materials with medium resistivity are worth examining more thoroughly as the stage of novel high-speed phenomena if the dielectric relaxation and the reversible breakdown are closely concerned with the EIRS of VO 2 or other materials.…”

Ultrafast diffraction conoscopy of the structural phase transition in VO2 : Evidence of two lattice distortions

“…VO 2 complex phase transition involves electronelectron correlations and electron-lattice interactions [2,3], which makes it challenging to determine the transition processes [4][5][6]. Along with temperature [1], VO 2 phase transition can also be triggered by a number of different external excitations such as pressure [7], strain [8], doping [9], or light [10]. Out of these external excitations, light with ultra-short laser pulses allows monitoring the phase transition dynamics on ultrafast time scale [11].…”

Exploiting the Semiconductor-Metal Phase Transition of VO2 Materials: a Novel Direction towards Tuneable Devices and Systems for RF-Microwave Applications

“…This remarkable transition is accompanied by a large modification of its electrical and optical properties: the electrical resistivity decreases by several orders of magnitude between the semiconductor and the metallic states while the reflectivity in the near-infrared optical domain increases (Zylbersztejn & Mott, 1975;Verleur et al, 1968). The reversible SMT transition can be triggered by different external excitations: temperature, optically (Cavalleri et al, 2001(Cavalleri et al, , 2004(Cavalleri et al, , 2005Ben-Messaoud et al, 2008;Lee et al, 2007), electrically-by charge injection (Stefanovich et al, 2000; Exploiting the semiconductor-metal phase transition of VO2 materials: a novel direction towards tuneable devices and systems for RFmicrowave applications 37 Guzman et al, 1996 and even pressure (Sakai & Kurisu, 2008). Recent studies showed that the electrically-and optically-induced transitions can occur very fast (Stefanovich et al, 2000;Cavalleri et al, 2001Cavalleri et al, -2005) (down to 100 fs for the optically-triggered ones (Cavalleri et al, 2005)) and that the transition is more typical of a rearrangement of the electrons in the solid (electron-electron correlations) than it is a an atomic rearrangement (crystalline phase transition from semiconductor monoclinic to a metallic rutile structure).…”