Effect of Pressure on the Electrical Conductivity of p - TlInSe<sub>2</sub>Single Crystals

Matiyev, A. Kh.; Georgobiani, A. N.; Kodin, V. V.; Matiyev, M. A.

doi:10.1080/00150193.2010.484786

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2017

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“…The effect of hydrostatic pressure on the electrical conductivity of p-TlInSe 2 single crystals measured along the tetragonal axis [0 0 1] in the range from 0 to 3 GPa was studied in the literature [11]. According to those results if gap narrowing under the law:…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and effective masses of TlInSe₂ under pressure

Оруджев

Ismayilova

Jafarova

2017

Materials Science-Poland

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We have studied the band structure and the band gap closure of TlInSe 2 under pressure in the range of 0 GPa to 21 GPa, by employing the first-principles method based on the density functional theory. We discuss the possible metallic transition in the tetragonal phase of TlInSe 2 crystal. Our calculation results show that the value of the pressure at the crossover from the direct to the indirect gap is found to be 8 GPa. The "semiconductor-metal" transition is determined to occur at 14 GPa. The study of the pressure effect on the effective masses for semiconductor state shows that with increasing pressure, the effective masses of holes and electrons decrease and the anisotropy of effective masses of holes is weakening.

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Section: Introductionmentioning

confidence: 99%