Effect of pressure on turnover behaviour inI–V characteristic curves in GeTeSe chalcogenide glass

El‐Mansy, M. K.; El-Zaidia, M. M.; El-Hassan, E. Abo; Ammar, A.

doi:10.1007/bf02454126

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…According to relation (3) which is proposed by Mort [7], the jump of a small polaron between ions depends on the jumping distance and the difference in energy of electrons located at different sites due to local variations in structure, oxygen coordination or the distribution of charged impurity atoms. This will continue until the temperature of the filament reaches its maximum value, ATj, in the off-state region at the turnover point and is given by [12] (5) When the distortion of the atomic arrangement in the material is sufficient, the localization of energy levels is completed.…”

Section: -Discussionmentioning

confidence: 99%

“…Glasses containing transition metal ions with two valence states such as vanadium (V a+ or V 5 § in vanadium phosphate glasses result in localization of energy states within the energy gap width [7][8][9]. At high-field conditions the non-linearity in I-V characteristic curves, in the region before the breakdown point, conduction may be enhanced by simple thermal effects (joule heating) [10][11][12][13] and/or field emission (Poole-Frenkel effect) [14][15][16][17]. Therefore the small polaron jumps to another empty state (V 5 § ) as its energy is equal to the difference between the two states (V t § and V 5 § with the assistance of a phonon.…”

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confidence: 99%

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Effect of composition, thickness and temperature on non-linear I–V curves in vanadium phosphate glasses

1996

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Glass layers of (V2 05)1 -x (P2 05)x were prepared by melting appropriate mixtures of V205 and P205 powders. The measurements of I-V characteristic curves show three regions of conduction, namely high-resistance state, turnover point with zero-differential resistance region (3V/3I = 0) and differential negative-resistance region. The turnover point is strongly dependent on composition, sample thickness and temperature. It is found that the increase of the ratio of phosphorus/vanadium reduces conductance as well as it raises the field required to produce turnover behaviour. The data in the range up to the turnover point are discussed on the basis of an electrothermal process. Results of the negative-resistance state could be explained in terms of a hopping mechanism.PACS 72.80 -Conductivity of specific materials.

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Section: -Discussionmentioning

confidence: 99%

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confidence: 99%

Effect of composition, thickness and temperature on non-linear I–V curves in vanadium phosphate glasses

1996

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“…The linear plots between ln (V th /T) and (1/T) for all compositions can be understood [27] in terms of the electrothermal model for the pre-switching region as follows. The linear plots between ln (V th /T) and (1/T) for all compositions can be understood [27] in terms of the electrothermal model for the pre-switching region as follows.…”

Section: Temperature and Thickness Dependence Of The I-v Characteristicsmentioning

confidence: 99%

Investigation of Switching and dc Conductivity on Some Vanadium Phosphate Tellurite Oxide Glasses

El-Hassan

Khoder

2001

phys. stat. sol. (a)

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Subject classification: 72.20. Ee; 72.80.Ga; 72.80.Ng; S10.15 The dc conductivity and switching properties of glassy samples of the system (76V 2 O 5 -24P 2 O 5 ) 1--x (TeO 2 ) x (where x = 0.0, 0.02 and 0.1 mol%) are investigated in the temperature range 303-625 K. The activation energy of conduction DE s , the predominant phonon frequency n ph and the Debye temperature q D were deduced. A composition dependence of the samples has been found. Thickness and temperature dependence of the I-V characteristics of the samples have been studied showing switching at the turnover point (TOP) from high resistance state (off state) to the negative differential resistance state (NDRS). Measurements of the dissipated power P th , the threshold voltage V th and the threshold resistance R th were carried out at TOP for different thicknesses and temperatures of the samples. The activation energies DE v , DE r and DE p (caused by threshold voltage, current and power, respectively) at the turnover point are deduced for different thicknesses of the samples. Temperature and composition dependence of the conduction path temperature (T 0 ), rise in temperature of conduction path DT J , specific heat S, density of localized states N(E F ) and the hopping distance have been obtained. The results are interpreted in terms of both electrothermal and the small polaron model.

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“…where µ 0 is dilation of the phase change material (PCM) during the drift process, D is the deformation potential in the range of 1-3 eV, 17 ∆W B is the energy barrier difference estimated to be around 1 eV,…”

Section: Introductionmentioning

confidence: 99%

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Jin

Kim

et al. 2014

AIP Advances

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Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM) and the encapsulating layer material (YELM) according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM) while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.

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Effect of pressure on turnover behaviour inI–V characteristic curves in GeTeSe chalcogenide glass

Cited by 6 publications

References 17 publications

Effect of composition, thickness and temperature on non-linear I–V curves in vanadium phosphate glasses

Effect of composition, thickness and temperature on non-linear I–V curves in vanadium phosphate glasses

Investigation of Switching and dc Conductivity on Some Vanadium Phosphate Tellurite Oxide Glasses

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

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