Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

Yazdanfar, Milan; Pedersen, Henrik; Kordina, Olof; Janzén, Erik

doi:10.4028/www.scientific.net/msf.778-780.159

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Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

Cited by 2 publications

References 13 publications

Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC

Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

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