Effect of pulse bias voltages on performance of CdTe thin film solar cells prepared by pulsed laser deposition

Wang, Dan; Yang, Ying; Guo, Tianzhen; Xiong, Xiaoyong; Xie, Yue; Li, Kelin; Li, Bing; Ghali, Mohsen

doi:10.1016/j.solener.2020.11.041

Cited by 33 publications

(6 citation statements)

References 30 publications

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“…On the flat surface, small islands with the same concentration of the film were homogeneously distributed on the surface as shown by the inset of Figure C. This is a common feature which is usually observed on PLD-deposited films due to the inhomogeneity of the plasma afterglow as produced by the laser ablation. − …”

Section: Results and Discussionmentioning

confidence: 57%

Evolution of Superconducting Properties in Fe_1.1Se_0.8Te_0.2 Films Before and After Structure Avalanche

Zhang

Chen

Xiao

et al. 2021

ACS Appl. Mater. Interfaces

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By preparing a series of high-quality Fe1.1Se0.8Te0.2 films on the CaF2 substrate via pulsed laser deposition, we reveal the evolution of the structure as well as the superconductivity with the film thickness. We have found that there exists a threshold thickness above which the critical temperature T c reaches its optimal value of 23.18 K with large activation energy, promising for high-field technological applications. Most importantly, the thick films have been found in a metastable state due to the fragile balance between the increased strain energy and the large compressive stress. Once the balance is broken by an external perturbation, a unique structure avalanche happens with a large part of the film exfoliated from the substrate and curves out. The exfoliated part of the film remains a single phase, with its lattice parameter and T c recovering the bulk values. Our results clearly demonstrate the close relation between the compressive stress of the film/substrate interface and the high critical temperature observed in FeSeTe films. Moreover, this also provides an efficient way to fabricate free-standing single-phase FeSeTe crystals in the phase-separation regime.

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Section: Results and Discussionmentioning

confidence: 57%

Evolution of Superconducting Properties in Fe_1.1Se_0.8Te_0.2 Films Before and After Structure Avalanche

Zhang

Chen

Xiao

et al. 2021

ACS Appl. Mater. Interfaces

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“…CdTe and CdS are typical layered semiconductors with almost complete chemical bonds inside the layer and, because of this, with a low density of dangling bonds on the surface [7,8] and mechanical weakness due to the weak Van der Walls' forces between layers. It was also found that the solar cell efficiency correlated with the chemical and morphological properties of the surfaces [9].…”

Section: Introductionmentioning

confidence: 96%

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

Ivanauskas¹,

Samardokas²,

Sukyte³

et al. 2022

Preprint

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Mixed cadmium tellurides – cadmium sulfides thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as precursor of tellurium and sulfur. We applied a low-temperature, nontoxic and cost-effective SILAR method. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62–) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models best fitted to quantify an uptake of chalcogens and cadmium on PA6. The effects of chalcogens and Cd on the structure and optical properties of PA6 were characterized using UV/Vis and IR spectra. The clear changes of these properties found in dependence on the concentration and exposure time in precursor's solutions. Fourier transform infrared spectroscopy and an ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogens having particles on the changes in structure of polyamide 6 films depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical band gap energy of formed layers was found to be in the order of 1.52–2.36 eV. Studies of scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is about 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.

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“…CdTe and CdS are typical layered semiconductors with almost complete chemical bonds inside the layer and, because of this, they have a low density of dangling bonds on the surface [7,8] and mechanical weakness due to the weak Van der Waals forces between layers. It has also been found that the solar cell efficiency correlated with the chemical and morphological properties of the surfaces [9].…”

Section: Introductionmentioning

confidence: 98%

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

et al. 2022

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Mixed cadmium tellurides–cadmium sulfide thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as a precursor of tellurium and sulfur. A low-temperature, nontoxic, and cost-effective SILAR method was applied. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through the consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62−) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models were the best fit to quantify an uptake of chalcogens and cadmium on PA 6. The effects of chalcogens and Cd on the structure and optical properties of PA 6 were characterized using UV-Vis and IR spectra. The clear changes of these properties depended on the concentration and exposure time in the precursor solutions. Fourier transform infrared spectroscopy and ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogen species on the changes in structure of polyamide 6 films, depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical bandgap energy of the formed layers was found to be in the order of 1.52–2.36 eV. Studies by scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is approximately 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.

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Effect of pulse bias voltages on performance of CdTe thin film solar cells prepared by pulsed laser deposition

Cited by 33 publications

References 30 publications

Evolution of Superconducting Properties in Fe_1.1Se_0.8Te_0.2 Films Before and After Structure Avalanche

Evolution of Superconducting Properties in Fe_1.1Se_0.8Te_0.2 Films Before and After Structure Avalanche

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

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Effect of pulse bias voltages on performance of CdTe thin film solar cells prepared by pulsed laser deposition

Cited by 33 publications

References 30 publications

Evolution of Superconducting Properties in Fe1.1Se0.8Te0.2 Films Before and After Structure Avalanche

Evolution of Superconducting Properties in Fe1.1Se0.8Te0.2 Films Before and After Structure Avalanche

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

Structural and Optical Characterizations of Cadmium Chalcogenide Layers on Polyamide Formed Using Monotelluropentathionic Acid

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Product

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Evolution of Superconducting Properties in Fe_1.1Se_0.8Te_0.2 Films Before and After Structure Avalanche

Evolution of Superconducting Properties in Fe_1.1Se_0.8Te_0.2 Films Before and After Structure Avalanche