2022
DOI: 10.1038/s41598-022-09414-3
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Effect of pulse laser frequency on PLD growth of LuFeO3 explained by kinetic simulations of in-situ diffracted intensities

Abstract: Atomistic processes during pulsed-laser deposition (PLD) growth influence the physical properties of the resulting films. We investigated the PLD of epitaxial layers of hexagonal LuFeO$$_3$$ 3 by measuring the X-ray diffraction intensity in the quasiforbidden reflection 0003 in situ during deposition. From measured X-ray diffraction intensities we determined coverages of each layer and studied their time evolution w… Show more

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Cited by 4 publications
(2 citation statements)
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“…The temperature of the layer, thus, formed increases when the next vapor pulse is deposited. The impact of the impinging flux of ablated particles on this temperature becomes more significant at higher deposition frequencies and should be considered, particularly when considering the formation of materials with low thermal conductivity using PLD [19].…”
Section: Pulsed Laser Depositionmentioning
confidence: 99%
“…The temperature of the layer, thus, formed increases when the next vapor pulse is deposited. The impact of the impinging flux of ablated particles on this temperature becomes more significant at higher deposition frequencies and should be considered, particularly when considering the formation of materials with low thermal conductivity using PLD [19].…”
Section: Pulsed Laser Depositionmentioning
confidence: 99%
“…The optimization process of multiferroic heterostructures of our interest, based on bilayer systems of ferromagnetic materials such as the hexaferrite BaFe 12 O 19 and ferroelectric materials such as LuFeO 3 and YbFeO 3 , crucially requires first a high-quality bottom electrode, which remains stable at elevated growth temperatures Tg > 900 °C in an oxidizing atmosphere during the pulsed laser deposition (PLD) growth of the above-mentioned subsequent layers [ 1 , 2 , 3 , 4 , 5 ]. Platinum is one of the noble metals, and is widely used in the application field of metal-ferroelectric-metals (MFMs) [ 6 , 7 , 8 ], ferroelectric memories [ 9 ], and microelectromechanical systems (MEMSs) [ 10 ] due to its high melting point, inertness in hard atmospheres, and low resistivity.…”
Section: Introductionmentioning
confidence: 99%