Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire

Zatsepin, D. A.; Boukhvalov, Danil W.; Бунтов, Е. А.; Zatsepin, A. F.; Баталов, Р. И.; Novikov, H. A.; Bayazitov, R. M.

doi:10.1016/j.apsusc.2022.153023

Cited by 8 publications

(3 citation statements)

References 33 publications

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“…An Alkα X-ray source was used for the measure-ments. Mgkα X-ray sources cannot be used for this, as a gallium Auger peak interferes with the carbon signal; however, with the Alkα X-ray source, accurate gallium and nitrogen ratios are not possible, as a gallium Auger interferes with the nitrogen signal [31]. Carbon C1s surface spectra are presented here.…”

Section: Methodsmentioning

confidence: 99%

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction

Butcher

Georgiev²,

Georgieva³

et al. 2022

Coatings

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Strong electric fields are generated by radio frequency (RF) plasma sources, and though the RF portion is too high a frequency for ions to react, the direct current (DC) portion of these fields has been shown to cause the atomic migration of metals, which can influence film morphology even downstream of the plasma where ionized plasma species are absent. In particular, we have observed the growth of nanopillars due to metal atoms migrating toward the positive field of the remote plasma. A biased grid placed between the plasma and the substrate can shield the substrate from these fields so that, when grounded, smooth films can be grown to a root mean square roughness of less than 1 nm. Positively biasing the grid returns the growth of nanocolumns. Interestingly, negatively biasing the grid significantly reduced the carbon and hydrocarbon content of gallium nitride films grown at a low temperature (~660 °C) using a nitrogen plasma, as observed using secondary ion mass spectroscopy (SIMS) and optical absorption measurements. The films also showed a notable improvement in conductivity and visible appearance.

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Section: Methodsmentioning

confidence: 99%

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction

Butcher

Georgiev²,

Georgieva³

et al. 2022

Coatings

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“…According to the relevant research on the characteristics of single-hole beam current, the ions emitted by the ion sheath are extracted into the ion beam after passing through the screen grid and obey the law of the three-second power due to the limitation of space charge [24]. The beam density of a single hole can be calculated by Equation (1). The corresponding meanings of all symbol abbreviations are given in the Abbreviation.…”

Section: "Thermal Spot" Model Theorymentioning

confidence: 99%

“…Ultra-precision machining technology with a smaller material resolution is the foundational tool of science and technology and has led the developing direction of modern manufacturing technology [ 1 , 2 ]. The most widely utilized ultra-high resolution processing technologies are nano-optical tweezers, atom force microscope (AFM), ion beam lithography, focused ion beam (FIB), and others [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear Effects of Pulsed Ion Beam in Ultra-High Resolution Material Removal

et al. 2022

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Ion beam sputtering is widely utilized in the area of ultra-high precision fabrication, coating, and discovering the microworld. A pulsed ion beam (PIB) can achieve higher material removal resolution while maintaining traditional ion beam removal performance and macro removal efficiency. In this paper, a 0.01 s pulse width beam is used to sputter atom layer deposition (ALD) coated samples. The nano-scale phenomenon is observed by high-resolution TEM. The results show that when the cumulative sputtering time is less than 1.7 s, the sputtering removal of solid by ion beam is accompanied by a nonlinear effect. Furthermore, the shortest time (0.05 s) and lowest thickness (0.35 nm) necessary to remove a uniform layer of material were established. The definition of its nonlinear effect under a very small removal amount guides industrial ultra-high precision machining. It reveals that PIB not only has high removal resolution on nanoscale, but can also realize high volume removal efficiency and large processing diameter at the same time. These features make PIB promising in the manufacturing of high power/energy laser optics, lithography objective lens, MEMS, and other ultra-high precision elements.

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Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering

Liu,

Wu,

Balaji

et al. 2024

Vacuum

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Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire

Cited by 8 publications

References 33 publications

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction

Nonlinear Effects of Pulsed Ion Beam in Ultra-High Resolution Material Removal

Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering

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