Effect of Pulsed Laser Radiation on the Properties of Resistive Thick Films Based on Nickel and Barium Borides

Паустовский, А. В.; Rud, B. M.; Shelud’ko, V. E.; Tel’nikov, E. Ya.; Rogozinskaya, A. A.

doi:10.1023/b:pmmc.0000028277.79443.70

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2008

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“…It was previously shown [8][9][10] that laser radiation changed the structure and electrophysical properties of Ni 3 B-, BaB 6 -, and Ba 0.76 La 0.24 B 6 -based TFRs. Since LaB 6 and BaB 6 form stable solid solution Ba 0.76 La 0.24 B 6 , of interest is to examine how milli-, micro-, and nanosecond laser radiation changes the structure and electrophysical properties of LaB 6 -based TFRs.…”

Section: Introductionmentioning

confidence: 99%

Laser processing of LaB6-based thick film resistors

Паустовский

Rud

Shelud’ko

et al. 2008

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The paper studies the effect of laser processing on the structure and electrophysical properties of LaB 6 -based thick film resistors (TFR). The phases and structure of the composition are investigated. The exposure to micro-and nanosecond pulses, unlike millisecond ones, is shown to insignificantly increase the electrical resistance of the film and to aid in forming more uniform and fine TFR structure. LaB 6 -based TFRs are more resistant to long-term exposure to nanosecond laser radiation than BaB 6 -and (BaB 6 -LaB 6 )-based ones.

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Section: Introductionmentioning

confidence: 99%