2021
DOI: 10.1016/j.jnucmat.2021.153175
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Effect of purity on the vacancy defects induced in self–irradiated tungsten: A combination of PAS and TEM

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Cited by 17 publications
(5 citation statements)
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“…It was indicated that a part of I n can potentially evolve into the dislocation loop [19,53], which can act as important trap site for HI, and affect the HI retention [14]. This means that the experimental total trap may be interstitial-type dislocation.…”
Section: The Clustering Properties During Dynamic Annealingmentioning
confidence: 99%
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“…It was indicated that a part of I n can potentially evolve into the dislocation loop [19,53], which can act as important trap site for HI, and affect the HI retention [14]. This means that the experimental total trap may be interstitial-type dislocation.…”
Section: The Clustering Properties During Dynamic Annealingmentioning
confidence: 99%
“…In earlier experiment by Keys et al [16], the recovery of radiation-induced defects in n-damaged W at elevated temperature was observed. In the defect recovery experiment, the behaviour of dislocation loop and vacacny-type defects evolution was characterized by transmission electron microscopy (TEM) [11,13,15] or positron annihilation spectroscopy (PAS) [17][18][19], e.g. Hu et al [19] showed the formation of vacancy-type defect in self-damaged W at low damage level by PAS measurement.…”
Section: Introductionmentioning
confidence: 99%
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“…The nanocavity total density and their mean size as a function of temperature are plotted in Figure 1a. The large scattering is mainly due to the small number of samples (and micrographs per temperature), local composition variations, variation of the transparency (variation of the sample thickness) and differences in the counting methods (human or automatic) [11,12]. On the same figure, lines represent a likelihood function introduced by Equation ( 4) and adjusted on experimental points.…”
Section: Experimental Datamentioning
confidence: 99%
“…( 10)], which is unfeasible experimentally. The more physical and general method based on the formation volumes of defects, especially voids, should be preferred 1,[47][48][49][50][51] (note that in some sources, formation volumes are used but they are named relaxation volumes 47,48 ).…”
Section: Journal Of Applied Physicsmentioning
confidence: 99%