Isolated impurity states in epitaxially grown semiconductor
systems
possess important radiative features such as distinct wavelength emission
with a very short radiative lifetime and low inhomogeneous broadening,
which make them promising for the generation of indistinguishable
single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe
quantum well (QW) nanopillar (NP) structures as a highly efficient
solid-state single-photon source operating at cryogenic temperatures.
We show that single photons are generated due to the radiative recombination
of excitons bound to neutral Cl atoms in ZnSe QW and the energy of
the emitted photon can be tuned from about 2.85 down to 2.82 eV with
ZnSe well width increase from 2.7 to 4.7 nm. Following the developed
advanced technology, we fabricate NPs with a diameter of about 250
nm using a combination of dry and wet-chemical etching of epitaxially
grown ZnSe/ZnMgSe QW structures. The remaining resist mask serves
as a spherical- or cylindrical-shaped solid immersion lens on top
of NPs and leads to the emission intensity enhancement by up to an
order of magnitude in comparison to the pillars without any lenses.
NPs with spherical-shaped lenses show the highest emission intensity
values. The clear photon-antibunching effect is confirmed by the measured
value of the second-order correlation function at a zero time delay
of 0.14. The developed single-photon sources are suitable for integration
into scalable photonic circuits.