Effect of radiation induced deep level traps on Si detector performance

Eremin, V.; Verbitskaya, E.; Li, Z

doi:10.1016/s0168-9002(01)01640-0

Cited by 44 publications

(33 citation statements)

References 17 publications

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“…When high-energy particles pass through a detector, they create defects in the silicon lattice, degrading the material's behaviour [7]. Firstly, some defects act as p-type dopants.…”

mentioning

confidence: 99%

Design, simulation, production and initial characterisation of 3D silicon detectors

Pennicard

Pellegrini

Lozano

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

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Abstract3D detectors are photodiode radiation detectors with n-and p-type electrode columns passing through a silicon substrate. This structure makes it possible to achieve a very small electrode spacing without reducing the sensitive thickness. This greatly reduces the detector's depletion voltage and collection time, and hence improves its radiation hardness. This could make 3D detectors useful as pixel detectors for future high-luminosity colliders, such as the Super-LHC.The research institute IMB-CNM (Centro Nacional de Microelectronica, Barcelona) have produced 3D pad, pixel and strip detectors with a "double sided 3D" structure. This fabrication has been done alongside design and simulation work at the University of Glasgow. The first devices produced by CNM have been successfully IV and CV tested, and source tests are ongoing. Additionally, this conference record discusses work done by other 3D detector collaborations: Stanford, Manchester University and Sintef; FBK (Trento);

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“…When high-energy particles pass through a detector, they create defects in the silicon lattice, degrading the material's behaviour [7]. Firstly, some defects act as p-type dopants.…”

mentioning

confidence: 99%

Design, simulation, production and initial characterisation of 3D silicon detectors

Pennicard

Pellegrini

Lozano

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

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“…The evaluated energies show the dominant effective trap level in the sample and their values correspond to observed deep levels in irradiated Si [14]. The deviations between simulation and experimental values can be understood in terms of the simultaneous activity of a few traps.…”

Section: Discussionmentioning

confidence: 72%

“…The known centres in silicon [14] cannot explain such features. Inter-centre recombination [15] could therefore play a central role in the highly irradiated material at low temperature, when tunneling plays an important role.…”

Section: Discussionmentioning

confidence: 96%

“…The results for sample B3 (n-Si without TDs) shows evidence of an additional trapping activation process that also requires additional analysis. The weakness of this fit are the extracted activation energy values of the trapping centres because centres having this activation energy appear as the effective traps at higher temperatures than RT [14].…”

Section: Discussionmentioning

confidence: 99%

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Dose-dependent recombination in silicon irradiated by gamma rays as determined by microwave absorption transients

Vaitkus¹

2006

Lithuanian J. Phys.

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Variation of carrier lifetime in magnetic Czochralski and float zone silicon irradiated with Co-60 γ-rays was investigated for doses in the range from 50 to 400 MRad. The inverse carrier lifetime was found to increase approximately linearly with dose and the carrier capture cross-section has been determined. The recombination and trapping constituents within recombination transients have been distinguished by combining analyses of the excess carrier decays measured using microwave absorption by free carriers for different excitation conditions and temperatures. The activation energies of traps and recombination centres have been determined from the carrier lifetime dependence on temperature.

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“…Consequence of defect formation and evolution in the material, some macroscopic effects in the device are produced. .The principal macroscopic effects are: bulk material resistivity modification, change of the depletion voltage, increase of the leakage current, change of the electric field distribution in irradiated silicon p-n junction, decrease of the collection efficiency and decrease of the signal to noise ratio [19], [20], [21]. Thus, the correlation established by the model between the initial material parameters, the rate of defect generation in the continuous irradiation regime, the production of defects and their time annealing, could be a useful clue in obtaining harder radiation materials for detectors.…”

Section: Introductionmentioning

confidence: 99%

Systematic Study Related to the Role of Initial Impurities and Irradiation Rates in the Formation and Evolution of Complex Defects in Silicon for Detectors in HEP Experiments*

Lazanu

2004

Phys. Scr.

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The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative phenomenological model developed previously by the authors and extended in the present paper. Continuous irradiation conditions are considered, simulating realistically the environments for these experiments. The generation rate of primary defects is calculated starting from the projectile -silicon interaction and from the recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy-and interstitial-impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: V 2 , VO, V 2 O, C i , C i O i C i C s and VP, is studied. The model predictions cover a generation primary rate of defects between 10 pairs/cm 3 /s and 10 pairs/cm 3 /s, and could be a useful clue in obtaining harder materials for detectors for space missions, at the new generation of accelerators, as, e.g. LHC, Super-LHC and Eloisatron, or for industrial applications.

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Effect of radiation induced deep level traps on Si detector performance

Cited by 44 publications

References 17 publications

Design, simulation, production and initial characterisation of 3D silicon detectors

Design, simulation, production and initial characterisation of 3D silicon detectors

Dose-dependent recombination in silicon irradiated by gamma rays as determined by microwave absorption transients

Systematic Study Related to the Role of Initial Impurities and Irradiation Rates in the Formation and Evolution of Complex Defects in Silicon for Detectors in HEP Experiments*

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