Effect of Rapid Thermal Annealing (RTA) on n-Contact of 980 nm Oxide VCSEL

Anuar, M. S.; Sharizal, A. Mohd; Mitani, Shujiro; Razman, Y. Mohamed; Mat, A.F.A.; Choudhury, Pankaj Kumar

doi:10.1109/smelec.2006.381084

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…The main trade-off here is to keep optical absorption losses at an acceptable level, since the free carrier absorption losses increase with increasing doping levels. Also further optimizations of the annealing process of the metal contacts could lead to a noticeable reduction of the total device resistance [136]. Additionally, VCSELs grown on p-doped substrates can be utilized, where the largest part of the thick bottom mirror is kept undoped and the top mirror becomes n-doped.…”

Section: Future Workmentioning

confidence: 99%

High Speed VCSELs for Optical Interconnects

Mutig

2011

Springer Theses

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The forecast for the serial transmission speeds used for data communication s ystems is a continued exponential increase with time, directly in concert with silicon integrated circuit scaling and in response to human society's perpetual hunger for massive increases in bandwidth. Electrical interfaces for single channel bit rates beyond 10 Gbit/s are being standardized for a variety of applications, including for example (with an expected data -rate): Fibre Channel FC32G (34 Gbit/s), InfiniBand (20 Gbit/s), common electrical interface CEI (25-28 Gbit/s), and universal serial bus protocols USB 3.0 (up to 25 Gbit/s). As a result, the fundamental electro-magnetic limitations of copper wire-based links at bit rates >10 Gbit/s make fiber based optics for data communication indispensable at distances >1 m. At shorter distances, problems associated with electrical transmission lines at such high frequencies, e. g. high power consumption, strong signal attenuation, signal distortion and electromagnetic interference, lead to unstoppable and progressive penetration of optical communication links into traditional copper interconnect markets. These trends greatly expand the applications of vertical cavity surface emitting lasers (VCSELs) and VCSEL arrays as very inexpensive, efficient, reliable, readily manufacturable and compact laser light sources for next-generations of fiber-optic, free-space, board-to-board, module-to-module, chip-to-chip and on-chip interconnects and related information systems and networks.Already today oxide-confined GaAs-based VCSELs emitting at 850 nm are the key components for low cost high speed local and storage area network (LAN/SAN) data communication systems. Furthermore, active optical cable links for short-reach computer and consumer applications, for example USB, DisplayPort, and HDMI standards, are increasingly based on VCSELs operating in the near-infrared spectral range. Immense research and development effort all around the world resulted in the great progress in the area of highspeed GaAs-based VCSELs in the last few years. At the standard wavelength of 850 nm room temperature error free data transmission at the bit rate of 32 Gbit/s has been demonstrated in 2009. Also at longer wavelengths bit rates of 35 Gbit/s (980 nm) and 40 Gbit/s (1100 nm) have been achieved at room temperature using GaAs-based VCSELs, while the latter device was based on the buried tunnel junction, requiring additional epitaxial growth step and making the laser fabrication more complicated. While the wavelength of 850 nm is the current standard for LAN/SAN applications, potential competitive standards at 980 and 1100 nm have many critical advantages for very and ultra short reach systems. This includes smaller operational voltages due to the lower photon energy, which are decisive for complementary metal oxide semiconductor (CMOS) drivers, transparency of the GaAs substrate, which is important for bottom-emitting lasers, and deeper potential wells, suppressing the escape of injected non-equilibrium carr...

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Section: Future Workmentioning

confidence: 99%

High Speed VCSELs for Optical Interconnects

Mutig

2011

Springer Theses

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“…Intermixing of atoms across the heterointerfaces forming the overall VCSEL structure has captured the attention of some research groups [11]. However, little has been done to theoretically model the effect of interdiffusion on the optical and electrical properties of VCSELs.…”

Section: Introductionmentioning

confidence: 99%

A model and analysis of intermixed 980 nm InGaAs/GaAsP MQW VCSEL

Khreis

2023

Preprint

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Inter-mixing in a hypothetical InGaAs/GaAsP multi-quantum vertical cavity surface emitting laser (VCSEL) designed for emission at 980 nm has been mathematically modeled and analyzed. The solution to the diffusion equation using a combined superposition of the error-function describing the disordering process for the whole VCSEL structure has been applied. The simulation results showed no significant change in the reflectivity of the VCSEL top and bottom distributed Bragg reflectors (DBRs) at diffusion lengths of up to 10 nm. However, the results revealed that the VCSEL DBRs mirror loss have been more than doubled at the same diffusion length. The VCSEL effective cavity length has been shown to significantly increase by 200 nm for a diffusion length of 10 nm as compared to that of the as-grown VCSEL. The VCSEL active region relative confinement factor has been shown to appreciably decrease as a function of diffusion length. The VCSEL threshold current and external differential quantum efficiency have been derived as a function of diffusion length and were found to reliably describe the intermixing process in VCSELs. The model presented in this article could provide a mean to describe the compositional grading process in VCSELs and may reliably predict their various optical and electrical parameters.

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Mutig

2011

Springer Theses

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Effect of Rapid Thermal Annealing (RTA) on n-Contact of 980 nm Oxide VCSEL

Cited by 3 publications

References 6 publications

High Speed VCSELs for Optical Interconnects

High Speed VCSELs for Optical Interconnects

A model and analysis of intermixed 980 nm InGaAs/GaAsP MQW VCSEL

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