Effect of -ray irradiation on performance of LiNbO₃-based piezoelectric vibration sensors

Abstract

LiNbO3 (LN)-based micro-electro-mechanical systems (MEMS) vibration sensors exhibit giant prospection in extreme environments, where exist a great amount of irradiation. However, to the best of our knowledge, it is still unknown whether the irradiation affects the performance of LN-based piezoelectric MEMS sensors. Based on this consideration, it is necessary to model the irradiation environment to investigate the effect of high dosage irradiation on LN-based vibration sensors. Firstly, the theoretical work is done to study the Compton Effect on the Gamma-ray irradiation with Co-60 source. After irradiation, X-ray diffraction (XRD) characterization was performed to verify the effect of irradiation on the crystalline of LN thin film. Meanwhile, the performances of output voltages on the five MEMS devices under various dosage of irradiation are compared. As a result, a neglected shift of 0.02 degrees was observed from the XRD image only under maximum irradiation dosage of 100 Mrad(Si). Moreover, the output voltages of cantilever-beam vibration sensors decrease by 3.1%. Therefore, it is verified that the γ-ray irradiation has very little influence on the LN-based MEMS vibration sensors, which have great attraction on the materials and sensors under high-dose irradiation.

Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams

“…The fabrication process of four-cantilever beam structure devices is similar to our previous research work [19,39], and the overall dimensions of the device design are 11 mm × 11 mm × 0.5 mm. The preparation process of four cantilever beam devices has been optimized and improved by using a backside SiO 2 hard mask for backside deep Si etching and the device's release process to improve the device's yield.…”