Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Lee, Baek-Ju; Seo, Dongwon; Choi, Jaehoon

doi:10.1007/s40042-021-00354-1

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…Meanwhile, for plasma formation, while an RF voltage of 13.56 MHz was dually applied to the upper chamber, 300 w/300 w was applied, respectively, at a process pressure of 0.6 torr. Typically, increasing the deposition temperature increased the density of the deposited film (Figure 2); thus, an appropriate temperature of 500 • C was applied to ensure that the DIPAS precursor did not thermally decompose [7,8]. Furthermore, the distance between the disk and showerhead was set to 7 mm, and the disk and wafer rotation speeds were set to 60 and 5 rpm, respectively, for depositing the silicon oxide thin film.…”

Section: Deposition Processmentioning

confidence: 99%

A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System

2022

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This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/deposition) method was developed in this study. After the etch step, an Ar/O2 (1:2) plasma treatment technology reduced the residual amount of F in the films to 0.05%. By improving the etch uniformity, the deposition uniformity after the DED process on a 12-inch flat wafer was secured within <1%, and a high-quality SiO2 thin film with a dielectric constant of 3.97 and a breakdown field of 11.41 MV/cm was fabricated. The DED method can be used for gap-filling even in patterns with a high aspect ratio by changing process parameters, such as RF power and division of etch steps, according to the shape, depth, and CD size of the pattern. This study confirmed that a void-free gap-fill process can be developed in a trench pattern with a maximum aspect ratio of 40:1.

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Section: Deposition Processmentioning

confidence: 99%

A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System

2022

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“…A higher refractive index difference, ∆n, between core and cladding promotes the confinement of light in the core. Therefore, a particular structure of silicon dioxide/silicon nitride/silicon dioxide is a suitable candidate for a planar optical wave guide due to refractive index ~ 2 of silicon nitride and silicon dioxide having a refractive index ~ 1.46 as lower and upper cladding creating a refractive index difference ∆n ~ 0.5 [9].Si 3 N 4 thin films are fabricated by low pressure chemical vapor deposition, thermal evaporation , plasma enhanced chemical vapor deposition and magnetron sputtering system [12][13][14][15][16]. However, the Magnetron sputtering technique has considerable advantages over the PECVD technique due to the absence of toxic gases, low temperature deposition, easy to tune deposition rate and simple deposition system [17].…”

Section: Introductionmentioning

confidence: 99%

Surface study of RF magnetron sputtered silicon nitride thin films

Majeed¹,

Tariq²,

Wasib³

et al. 2023

JOBM

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Silicon nitride thin films were deposited on the one-sided P-type polished boron-doped silicon wafer substrate via RF magnetron sputtering using stochimetric silicon nitride target at various target-to-substrate distances. Target to substrate spacing, a nonconventional parameter, was varied to optimize the surface roughness and grain size. This optimization provided a normal distribution of homogenous, densely packed silicon nitride thin film free of surface cracks.. Atomic Force Microscopy was employed to explore the accurate surface roughness parameters of Silicon nitride thin films. The surface roughness and grain analysis for all samples exhibited a direct relation to each other and have an inverse correlation with the target to substrate spacing. The surface morphology of Si3N4 was analyzed by the following parameters; average roughness, root-mean square roughness, maximum peak to valley height, ten-point average roughness, skewness, and kurtosis of the line. The surface roughness of silicon nitride films has notable significance in the manufacturing of bio-sensor based on silicon nitride waveguides.

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“…A self-limiting reaction is caused by the chemical adsorption on the surface, which results in deposition of Å-level thin films individually, allowing precise thickness control. In addition, it is an essential deposition technology for next-generation semiconductor manufacturing because its step coverage characteristics in fine patterns are superior to CVD [1,2]. The ALD deposition technology is being explored vigorously in research for its use in the development of miniaturized semiconductors and perovskite solar cells.…”

Section: Introductionmentioning

confidence: 99%

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Lee

Cheon

et al. 2023

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In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor field-effect transistors. Tungsten (W) has primarily been used as a conventional gate electrode, but it suffers from reduced resistivity due to the residual fluorine component generated from the deposition process. Thus, herein, we developed a Mo thin film with low resistivity that can substitute W. The MoO2Cl2 precursor used to deposit the Mo thin film exists in a solid state. For solid precursors, the vapor pressure does not remain constant compared to that of liquid precursors, thereby making it difficult to set process conditions. Furthermore, the use of solid precursors at temperatures 600 °C and above has many limitations. Herein, H2 was used as the reactive gas for the deposition of Mo thin films, and the deposition temperature was increased to 650 °C, which was the maximum processing temperature of the aluminum nitride heater. Additionally, deposition rate, resistivity change, and surface morphology characteristics were compared. While resistivity decreased to 12.9 μΩ∙cm with the increase of deposition temperature from 600 °C to 650 °C, surface roughness (Rq) was increased to 0.560 nm with step coverage of 97%. X-ray diffraction analysis confirmed the crystallization change in the Mo thin film with increasing process temperature, and a certain thickness of the seed layer was required for nucleation on the initial wafer of the Mo thin film. Thus, the molybdenum nitride thin film was deposited after the 4 nm deposition of Mo thin film. This study confirmed that crystallinity of Mo thin films must be increased to reduce their resistivity and that a seed layer for initial nucleation is required.

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Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Cited by 4 publications

References 13 publications

A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System

A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System

Surface study of RF magnetron sputtered silicon nitride thin films

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

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