Effect of rf plasma nitriding time on electrical and optical properties of ZnO thin films

Structure, Morphology, and Optical Properties of the Compact, Vertically-Aligned ZnO Nanorod Thin Films by the Solution-Growth Technique

“…The average visible transmittance calculated in the wavelength ranging 400-800 nm of the ZnO nanorod thin films fabricated at 75 °C for 1.5, 3, 4.5, and 6 h are 87.9, 87.5, 84.9, and 84.7%, respectively. Generally, there are three factors influencing the transmittance of ZnO nanorod thin films: (a) surface roughness, (b) defect centers, and (c) oxygen vacancies (Mohamed et al, 2006). In our system, the decrease of transmittance for the ZnO nanorod thin films fabricated at 75 °C for 1.5, 3, 4.5, and 6 h with the 100-800 nm in thickness could be related to two factors.…”

“…When the growth time increases from 3 to 6 h, the values o f E g decrease from 3.35 to 3.31 eV which gradually diverges from the intrinsic band gap of ZnO (3.37 eV). It is known that the energy band gap of a ZnO thin film could be affected by the residual strain (Mohamed et al, 2006;Srikant & Clarke, 1997), defects (Burstein, 1954;Dong et al, 2007;Moss, 1954;Sakai et al, 2006), and grain size confinement (Prathap et al, 2008;. For ZnO nanorod thin films fabricated at 75 °C for 3 to 6 h, the average grain sizes enlarge from ~105 to ~200 nm and the film thicknesses increase from ~460 to ~800 nm, which results in the variation of strain from -0.26 to -0.32%.…”

Effect of growth temperature on structural and electronic properties of ZnO thin films

“…It is indicated the growth temperature above room temperature exhibiting good crystallinity. The films has the highest peak value of XRD and the narrowest value of FWHM, it has the best crystal quality [6,7]. The particle size of thin films ZnO for (002) was determined according to Scherrer in a around 10.2 nm at room temperature and increased to 60.2 nm for the growth temperature 500 o C. The increasing particle size is due to the emerging of the smaller particles into larger ones resulting from the potential energy difference between small and large particles, which was occur through solid state diffusion [8].…”

“…The structural, electrical and optical properties of ZnO significantly improve with high dopant concentration and after treated by argon, oxygen, Nitrogen, and chlorine plasma. In additions, hydrocarbon impurities in ZnO inevitably incorporated during deposition have negative effect on device performance [1,4,6].…”

Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering

“…Furthermore, ZnO-based TCO films are more resistant to reductive hydrogen plasmas than In 2 O 3 -based films. TCO films can be prepared by a variety of techniques such as DC magnetron sputtering, RF magnetron sputtering, chemical vapor deposition (CVD), pulsed-laser deposition (PLD), molecular beam epitaxy (MBE) and spray-pyrolysis 4) . Normally, stoichiometric nondoped ZnO films present a high resistivity, due to their low carrier density.…”