Effect of rotating magnetic field on temperature field and flow field of Ga_1−x In _x Sb crystal growth with traveling heater method

Abstract

In order to optimize the process parameters and shorten the experimental period, Ga1−xInxSb crystal growth with travelling heating method applied rotating magnetic field (RMF) was simulated. The results show that RMF changed the melt convection pattern, firstly, from a single natural convection cell to two forced convection cells coupled each other, which then became independent of each other, then each of which involved into a couple of sub-convective cells as the RMF field intensity increased. Secondly, RMF significantly increased the convection intensity, and the maximum flow velocity increased about 52 times at the initial stage of crystal growth, and about 16 times in the last stage. Thirdly, RMF decreased the axial temperature gradient in the melting zone by 10% above, and decreased the radial temperature gradient about 25% at the same time. And RMF reduced the deflection of crystal growth interface about 21%–23% during the crystal growth.

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

“…According to the above equation ( 2), the Lorentz force will increase with the increase of RMF intensity. Li et al [29] used finite element analysis to simulate the influence of RMF intensity on the convection during the crystal growth, and reported that when RMF intensity were set to 0.0, 10, 30, and 50 mT, respectively, the corresponding maximum flow velocities in the melt were 1.039 × 10 −3 m s −1 , 2.007 × 10 −2 m s −1 , 2.719 × 10 −2 m s −1 , and 5.586 × 10 −2 m s −1 . That is to say, the maximum flow velocity increased obviously with RMF intensity increase, and increased about 20-50 times.…”