The effect of nanoscale-SiC doping of MgB 2 was investigated in comparison with undoped, clean-limit, and Mg-vapor-exposed samples using transport and magnetic measurements. It was found that there are two distinguishable but related mechanisms that control the critical current-density-field J c ͑H͒ behavior: increase of upper critical field H c2 and improvement of flux pinning. There is a clear correlation between the critical temperature T c , the resistivity , the residual resistivity ratio RRR= R͑300 K͒ / R͑40 K͒, the irreversibility field H*, and the alloying state in the samples. The H c2 is about the same within the measured field range for both the Mg-vapor-treated and the SiC-doped samples. However, the J c ͑H͒ for the latter is higher than the former in a high-field regime by an order of magnitude. Mg vapor treatment induced intrinsic scattering and contributed to an increase in H c2 . SiC doping, on the other hand, introduced many nanoscale precipitates and disorder at B and Mg sites, provoking an increase of ͑40 K͒ from 1 ⍀ cm ͑RRR= 15͒ for the clean-limit sample to 300 ⍀ cm ͑RRR= 1.75͒ for the SiC-doped sample, leading to significant enhancement of both H c2 and H* with only a minor effect on T c . Electron energy-loss spectroscope and transmission electron microscope analysis revealed impurity phases: Mg 2 Si, MgO, MgB 4 , BO x , Si x B y O z , and BC at a scale below 10 nm and an extensive domain structure of 2 -4-nm domains in the doped sample, which serve as strong pinning centers.