Effect of Schottky barrier on the transport property in perovskite oxide heterostructures

Han, Peng; Lu, Haitao; Jin, Kui-juan; Jia, Jin‐Feng; Qiu, Jie; Hu, Chunlian; Liao, Leng

doi:10.1016/j.physb.2008.12.018

Cited by 3 publications

(2 citation statements)

References 28 publications

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“…It has been reported that contact of Au/perovskite oxide films and In/NSTO is good Ohmic. 20,21) The Au and In electrodes were used as ohmic contacts for SSO and NSTO, respectively. By applying a pulsed dc bias across the interface with the voltage polarity defined at the bottom In electrode, the temperature-dependent IV curves were measured.…”

Section: Resultsmentioning

confidence: 99%

Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

Wang

Niu

Cui

et al. 2023

Korean. J. Mater. Res.

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An all-perovskite oxide heterostructure composed of SrSnO 3 /Nb-doped SrTiO 3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO 3 and Nb-doped SrTiO 3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V -13. Under reverse bias, however, the temperature-dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

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Section: Resultsmentioning

confidence: 99%

Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

Wang

Niu

Cui

et al. 2023

Korean. J. Mater. Res.

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“…However, it is observed that the maximum forward bias of the magnetite films deposited on 0.1% Nb:SrTiO 3 is higher than the value obtained for the samples grown on 1.4% Nb:SrTiO 3 substrates. Theoretical calculations performed recently by Han et al in perovskite oxide heterostructures [203], have attributed this behavior to the Schottky junction formed by the In contact and the Nb:SrTiO 3 substrate. This effect decreases the maximum bias voltage for higher doping densities and the experimental measurements cannot be fitted with the previous model.…”

Section: Nbmentioning

confidence: 93%

Epitaxial Growth of half-metallic oxide thin Films by Pulsed Laser Depositions.

Esteban¹,

Juliá²

2010

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Temperature-dependent Poole–Frenkel transport properties of the SrSnO3/Nb-doped SrTiO3 heterostructure

et al. 2023

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All-perovskite oxide heterostructure of SrSnO3/Nb-doped SrTiO3 was fabricated by using the pulsed laser deposition method. Unusual transport properties of the interface between SrSnO3 and Nb-doped SrTiO3 have been investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior has been demonstrated by the temperature-dependent current–voltage (IV) measurements. The forward current showed typical IV characteristics of p–n junctions or Schottky diodes and was perfectly fitted using the thermionic emission model. At the reverse bias, however, the temperature-dependent IV curves developed in the opposite direction, indicating the tunneling effects on the interface. The Poole–Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

show abstract

Effect of Schottky barrier on the transport property in perovskite oxide heterostructures

Cited by 3 publications

References 28 publications

Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

Epitaxial Growth of half-metallic oxide thin Films by Pulsed Laser Depositions.

Temperature-dependent Poole–Frenkel transport properties of the SrSnO3/Nb-doped SrTiO3 heterostructure

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