Effect of Se diffusion and the role of a thin CdS buffer layer in the performance of a CdSe/CdTe solar cell

Reyes-Banda, Martin Gregorio; Regalado-Pérez, E.; Pintor‐Monroy, Maria Isabel; Hernández-Gutiérrez, C.A.; Quevedo‐Lopez, Manuel; Mathew, Xavier

doi:10.1016/j.spmi.2019.106219

Cited by 12 publications

(14 citation statements)

References 35 publications

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“…Rather than restructuring of the radiative pathways, a uniform reduction of PL intensity was observed (Figure S9b). Here, the results may be understood by considering that the higher Se content may have reduced the effects of Cu migration, consistent with recent SIMS analysis …”

Section: Results and Discussionsupporting

confidence: 89%

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Jamarkattel

Mathew

Phillips

et al. 2022

ACS Appl. Mater. Interfaces

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The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and V oc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSe x Te1–x layer.

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Section: Results and Discussionsupporting

confidence: 89%

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Jamarkattel

Mathew

Phillips

et al. 2022

ACS Appl. Mater. Interfaces

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“…However, CdTe solar cell based on the sputtered CdSe process shows much lower V oc and FF due to the Se-related defects. [8] These defects can be found both in the CdSe x Te 1Àx layer [9][10][11][12] and at the SnO 2 :F (FTO)/CdSe front interface. [13,14] Although many attempts have been made to improve the front interface quality, [15,16] so far no efforts solve the dilemma and all the cells show efficiency less than 15%.…”

Section: Introductionmentioning

confidence: 99%

Improving CdTe‐Based Thin‐Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process

Zhou²,

Qin³

et al. 2020

Physica Status Solidi (a)

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Sputtered CdSe window layer can improve the short-circuit current density (J sc) of CdTe-based thin-film solar cell, however, meanwhile degrade the open-circuit voltage (V oc) and fill factor (FF). Herein, an oxygenation process is introduced during CdSe sputtering to improve this window layer's property for better device performance. The influence of oxygen on the CdSe is similar as the effect of oxygen on CdS. Incorporation of oxygen into the CdSe film promotes the formation of CdSeO 3 phase. Both V oc and FF of the CdTe solar cells are improved due to the formation of CdSeO 3 , and high efficiency (Eff.) of 18.6% is achieved. Efficiency improvement at module level is also demonstrated after applying the CdSe:O process in production line. This progress contributes to the CdTe-based thin-film module production for further efficiency improvement and cost reduction.

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“…increases as a function of the incident wavelength as it approaches the CdTe bandgap of 885 nm (1.4 eV). [ 29 ]…”

Section: Aps Optical Responsementioning

confidence: 99%

“…The different response levels for each wavelength observed in both plots are explained by the device dependence on quantum efficiency as a function of the wavelength. [ 29 ]…”

Section: Aps Optical Responsementioning

confidence: 99%

“…We use a highly doped poly‐Si layer as the electrical and mechanical interface between the two thin‐film technologies while the use of chemical bath deposition (CBD) and close‐spaced sublimation (CSS) for the deposition of the CdS and CdTe layers, respectively, ensures the compatibility of this technology with low‐cost and large‐area applications. [ 27–29 ] CdS/CdTe P‐N diodes were previously demonstrated as thin‐film thermal neutron detectors using these technologies. [ 18,26 ]…”

Section: Introductionmentioning

confidence: 99%

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Thin‐Film Devices for Active Pixel Sensor Schemes Enabling High Density and Large‐Area Sensors

Ávila-Avendaño

Mejía

Reyes-Banda

et al. 2021

Adv Materials Technologies

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A novel and scalable method enabling the integration of dissimilar thin‐film devices for high density and large‐area sensors is demonstrated. The method is validated by integrating CdS/CdTe P‐N thin‐film diodes with poly‐Si thin‐film transistors (TFTs) in an active pixel sensor (APS) scheme. These devices have been used separately in low‐cost and large‐area applications such as liquid‐crystal displays (Poly‐TFTs) and solar cells (CdS/CdTe) and the methods allow a seamless integration that eliminates the use of discrete pixel‐to‐pixel bumping interconnections. APSs, consisting of a cascode TFT amplifier and a CdS/CdTe diode, are evaluated using pulsed light sources under several wavelengths and intensities. The results demonstrated a responsivity increase of >100× for the integrated sensors and well‐defined signal amplitude, as desirable for energy and intensity monitoring. The method enables the use of two dissimilar and remarkable devices in a wide range of applications such as X‐ray imagers, gamma‐ray detectors, and thermal neutron detectors, while offering large‐area and low‐cost compatibility. More importantly, the integrity and reliability of the diodes and TFTs are not affected by the integration process.

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Effect of Se diffusion and the role of a thin CdS buffer layer in the performance of a CdSe/CdTe solar cell

Cited by 12 publications

References 35 publications

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Improving CdTe‐Based Thin‐Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process

Thin‐Film Devices for Active Pixel Sensor Schemes Enabling High Density and Large‐Area Sensors

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