2023
DOI: 10.1002/masy.202100482
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Effect of Series Resistance and Temperature on PCE of Double Perovskite La2NiMnO6‐Based PSC

Abstract: In the present work, lead-free double perovskite material La 2 NiMnO 6 is used as a light-harvesting layer in device configuration of FTO/TiO 2 /LNMO/CuI/Au and simulates through solar cell capacitance simulator (SCAPS-1D). The series resistance and operating temperature are varied from 0 to 6 𝛀 and 250 to 350 K respectively to investigate the device output under ambient atmospheric conditions. The designed perovskite solar cell (PSC) based device helps to optimize the chemical and physical parameter of PSC d… Show more

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Cited by 4 publications
(2 citation statements)
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“…FTO/TiO 2 /LNMO/CuI/Au 0.17 (Experiment) 2017 [42] FTO/TiO 2 /LNMO/CuI/Au 9.68 (simulation) 2021 [15] FTO/TiO 2 /LNMO/CuI/Au 15.42 (simulation) 2021 [16] ITO/TiO 2 /LNMO/Spiro-OMeTAD 22.43 (simulation) 2021 [43] FTO/WS 2 /LNMO/Cu 2 O/Au 24.08 (simulation) 2023 [44] ITO/NiO/LNMO/C60/BCP/Pt 24.46 (simulation) 2022 [17] FTO/TiO 2 /LNMO/CuI/Au 25.26 (simulation) 2023 [45] FTO/SnO 2 /LNMO/MoO 3 /Au 29.20 This study…”
Section: Device Structure Pce [%] Yearmentioning
confidence: 99%
“…FTO/TiO 2 /LNMO/CuI/Au 0.17 (Experiment) 2017 [42] FTO/TiO 2 /LNMO/CuI/Au 9.68 (simulation) 2021 [15] FTO/TiO 2 /LNMO/CuI/Au 15.42 (simulation) 2021 [16] ITO/TiO 2 /LNMO/Spiro-OMeTAD 22.43 (simulation) 2021 [43] FTO/WS 2 /LNMO/Cu 2 O/Au 24.08 (simulation) 2023 [44] ITO/NiO/LNMO/C60/BCP/Pt 24.46 (simulation) 2022 [17] FTO/TiO 2 /LNMO/CuI/Au 25.26 (simulation) 2023 [45] FTO/SnO 2 /LNMO/MoO 3 /Au 29.20 This study…”
Section: Device Structure Pce [%] Yearmentioning
confidence: 99%
“…[ 24 ] Raj et al performed numerical simulations on double‐perovskite La 2 NiMnO 6 PSCs, and the final optimized results exhibited an excellent PCE of 26.79%. [ 25 ] As shown in Figure a, the structure of the device is glass/FTO/Cs 2 TiBr 6 /MASnBr 3 /Au, which is different from the n– i –p structure of conventional PSCs, which has no ETL. At the same time, MASnBr 3 is used to replace the traditional HTL to form a laminated structure, which is more conducive to the built‐in electric field of the device.…”
Section: Device Simulation and Model Verificationmentioning
confidence: 99%