Effect of SHI irradiation on the morphology of SnO2 thin film prepared by reactive thermal evaporation

Abhirami, K.M.; Matheswaran, P.; Gokul, B.; Ramakrishnan, S.; Kanjilal, D.; Asokan, K.

doi:10.1016/j.vacuum.2012.09.013

Cited by 48 publications

(5 citation statements)

References 17 publications

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“…There are several ways to control the structure and morphology of the surfaces and interfaces of thin film and a suitable characterization in this respect is required to study its influence on macroscopic properties. Thin films, grown by physical vapour deposition techniques like thermal evaporation [37], sputtering [38], and pulsed laser deposition (PLD) [12,19,39] have shown great structural and compositional stabilities. The PLD is an ideal and preferred technique for the deposition of compound oxide films because it maintains the stoichiometry of the target compound.…”

Section: Introductionmentioning

confidence: 99%

“…The PLD is an ideal and preferred technique for the deposition of compound oxide films because it maintains the stoichiometry of the target compound. The SHI irradiation [37], as well as low energy ion irradiation [38] of the thin films, have shown modification in microstructure (change in microstrain and crystallite size) and morphology without changing the crystalline structure (atomic length scale) even on varying the fluence of ion by an order of three [40]. Here, we report the evolution of structure and morphology upon ion irradiation of the (La 1-y Pr y ) 1-x Ca x MnO 3 film with x = 0.375 and y = 0.6 (i.e.…”

Section: Introductionmentioning

confidence: 99%

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Influence of swift heavy ion irradiation on structure and morphology of La_0.25Pr_0.375Ca_0.375MnO₃ film

Bhatt,

Kumar,

Tokas

et al. 2024

Surf. Topogr.: Metrol. Prop.

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The effects of Ag15+ (120 MeV) swift heavy ion irradiation on the structural and morphological properties of epitaxial La0.25Pr0.375Ca0.375MnO3 (LPCMO) thin films were investigated by x-ray scattering and atomic force microscopy (AFM) techniques. LPCMO films of thickness ~ 280 Å were irradiated with an Ag15+ ion beam at different fluences of 1 × 1011, 5 × 1011, and 1 × 1012 ions/cm2. XRD results suggested the development of the tensile stress along the out-of-plane direction of the LPCMO film upon ion irradiation,which increases on increasing the ion fluence. The morphology of the film was also modified with the irradiation and an increase in the fluence of the ion beam enhanced the in-plane height-height correlation length scale (grain size) with a loss of the fractal behaviour. The linear variation of microstrain with ion irradiation fluence in thin LPCMO film can be considered for a possible strain-driven application in modifying functional properties of such a phase separated complex oxide.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of swift heavy ion irradiation on structure and morphology of La_0.25Pr_0.375Ca_0.375MnO₃ film

Bhatt,

Kumar,

Tokas

et al. 2024

Surf. Topogr.: Metrol. Prop.

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“…Thus, investigation of the physical properties of SnO2 thin films attain great importance. Over the past few decades, many methods have been developed for the fabrication of thin films of SnO2 namely, pulsed laser deposition [7], reactive thermal evaporation [8], RF-magnetron sputtering [9], atomic layer deposition [10], electron beam evaporation [6] spray pyrolysis technique [11], dip coating method [12], spin coating [3], SILAR [13], sol-gel technique [14] and chemical bath deposition (CBD) [17] etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing on the Physical Properties of Chemically Synthesized Nanocrystalline SnO2 Thin Films

Tayade,

Bhoye,

Sali

et al. 2024

J. Nano- Electron. Phys.

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This study investigates the effect of annealing on the physical properties of the chemically synthesized nanocrystalline SnO2 thin films deposited onto glass substrate at room temperature. SnO2 thin films were annealed for 2 h in an oxygen environment at different annealing temperature. From X-ray diffraction study it was observed that as-deposited SnO2 film and films annealed at 300 C and 400 C exhibited amorphous nature, while SnO2 films annealed at 500 C exhibits orthorhombic crystal structure. SEM results demonstrates that morphology of SnO2 thin films are determined by the annealing temperature. The optical band gap of the prepared nanocrystalline SnO2 thin films found in the range of 3.28 eV to 2.79 eV depending upon the annealing temperature. Finally, as a result of the analysis, we can say that the physical properties of SnO2 thin films can be modified by thermal annealing.

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“…In this paper we report our studies on the effect of SHI irradiation in SnO 2 polycrystalline thin films differing in their conductivity. There exist few reports in the literature discussing the effect of SHI irradiation on the structural, optical, electrical and sensing properties of SnO 2 thin films grown using different deposition techniques [24,25,26,27,28,29,30,31,32,33,34,35,36,37,38]. However, no systematic studies have been carried out to verify the role of material properties such as carrier concentration (n) in determining the energy relaxation processes of SHI in SnO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

Role of carrier concentration in swift heavy ion irradiation induced surface modifications

et al. 2017

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Highly conducting SnO2 thin films were prepared by chemical spray pyrolysis technique. One set of as-deposited films were annealed in air for 2 h at 850 o C. These as-deposited and annealed films were irradiated using Au 9+ ions with energy of 120 MeV at different fluences ranging from 1 × 10 11 to 3 × 10 13 ions/cm 2 . Electrical measurement shows that as-deposited SnO2 films are in conducting state with n = 3.164 × 10 20 cm −3 and annealed SnO2 films are in insulating state. The amorphized latent tracks are created only above a certain threshold value of Se, which directly depends on the free electron concentration (n). The electronic energy loss (Se) of 120 MeV Au 9+ ions in SnO2 is greater than the threshold energy loss (S eth ) required for the latent track formation in annealed SnO2 thin film, but is less than S eth required for as-deposited SnO2 film. Therefore, the latent tracks are formed in the annealed SnO2 film and not in the as-deposited SnO2 film. Thermal spike model is used for the calculation of threshold energy loss and radius of melted zone. The possible mechanism of the structural changes and surface microstructure evolutions is briefly discussed in the light of ion's energy relaxation processes and target's conductivity. The atomic force microscopy (AFM) study of films shows that the morphologies of irradiated films are linked with carrier concentration of target materials.

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Effect of SHI irradiation on the morphology of SnO2 thin film prepared by reactive thermal evaporation

Cited by 48 publications

References 17 publications

Influence of swift heavy ion irradiation on structure and morphology of La_0.25Pr_0.375Ca_0.375MnO₃ film

Influence of swift heavy ion irradiation on structure and morphology of La_0.25Pr_0.375Ca_0.375MnO₃ film

Effect of Annealing on the Physical Properties of Chemically Synthesized Nanocrystalline SnO2 Thin Films

Role of carrier concentration in swift heavy ion irradiation induced surface modifications

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Effect of SHI irradiation on the morphology of SnO2 thin film prepared by reactive thermal evaporation

Cited by 48 publications

References 17 publications

Influence of swift heavy ion irradiation on structure and morphology of La0.25Pr0.375Ca0.375MnO3 film

Influence of swift heavy ion irradiation on structure and morphology of La0.25Pr0.375Ca0.375MnO3 film

Effect of Annealing on the Physical Properties of Chemically Synthesized Nanocrystalline SnO2 Thin Films

Role of carrier concentration in swift heavy ion irradiation induced surface modifications

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Influence of swift heavy ion irradiation on structure and morphology of La_0.25Pr_0.375Ca_0.375MnO₃ film

Influence of swift heavy ion irradiation on structure and morphology of La_0.25Pr_0.375Ca_0.375MnO₃ film