Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si

Mizuo, Shoichi; Kusaka, Takahisa; Shintani, Akira; Nanba, M.; Higuchi, Hiroyoshi

doi:10.1063/1.332611

Cited by 81 publications

(34 citation statements)

References 11 publications

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“…This points to a supersaturation of native point defects established by B diffusion. Additional results on B diffusion in Si isotope structures obtained at different temperatures, on enhanced (retarded) B diffusion under I (V) injection [129,132] and of isoconcentration diffusion experiments [133] reveal the charge states of the mobile B-related defect and of the native point defects involved in B diffusion. Altogether, B diffusion in Si under various experimental conditions is consistently described by the following reactions [64] with neutral (I 0 ), singly and doubly positively (I C , I 2C ) charged self-interstitials and neutral (V 0 ), singly positive (V C ), and singly and doubly negative (V , V 2 ) vacancies.…”

Section: Diffusion Profiles Of Dopant Atomsmentioning

confidence: 96%

“…The broadening of the Si profiles demonstrates that the I supersaturation due to P diffusion is significantly lower than expected on the basis of the previous considered P diffusion models. Taking into account additional results on P diffusion in Si obtained under different experimental conditions that comprise diffusion studies under intrinsic and extrinsic doping [150,151], under defect injection [129,132,152], and under isoconcentration conditions [150], the following reactions were determined to accurately describe P diffusion in Si [64] PV P Successful modeling of the simultaneous P and Si diffusion requires a contribution of singly positively charged mobile P defects to P diffusion. Generally, the extended tail of the P profiles compared to the much steeper As profile at the diffusion front was explained with an I-supersaturation established during P diffusion.…”

Section: Diffusion Profiles Of Dopant Atomsmentioning

confidence: 99%

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Diffusion and Point Defects in Silicon Materials

Bracht

2015

Lecture Notes in Physics

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This chapter aims to provide a basic understanding on the complex diffusion behavior of self-, dopant-, and selected metal atoms in silicon (Si). The complexity of diffusion in Si becomes evident in the shape of self-and foreign-atom diffusion profiles that evolves under specific experimental conditions. Diffusion studies attempt to determine from the diffusion behavior not only the mechanisms of atomic transport but also the type of the point defects involved. This information is of pivotal interest to control the diffusion and activation of dopants during the fabrication of Si-based devices and, from a more fundamental scientific point of view, for comparison to the predictions of theoretical calculations on the properties of point defects in Si. In general, diffusion research relies both on experimental methods to accurately determine diffusion profiles established under well-defined conditions. The analysis of diffusion profiles that can be based on either analytical or numerical solutions of the considered diffusion-reaction equations provides first information about possible diffusion mechanisms. To identify the mechanisms of diffusion, studies under different experimental conditions have to be performed. This chapter on diffusion in Si starts with an introduction on the significance of diffusion research in semiconductors to determine the properties of atomic defects. Diffusion in solids is treated from a phenomenological and atomistic point of view. Experiments designed to investigate the diffusion of self-and foreign atoms are presented and typical self-and foreign-atom profiles obtained after diffusion annealing under specific conditions are illustrated. The mathematical treatment of diffusion-reaction mechanisms is introduced to understand the shape of diffusion profiles and the meaning of the diffusion coefficient deduced from experiments. Modeling of self-, dopant-, and metal-atom diffusion is described that aims at a consistent interpretation of atomic transport processes in Si based on unified properties of the native point defects involved. Finally, till unsolved questions on the properties of point defects in bulk Si and on the diffusion behavior in threedimensional confined Si structures are addressed.

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Section: Diffusion Profiles Of Dopant Atomsmentioning

confidence: 96%

Section: Diffusion Profiles Of Dopant Atomsmentioning

confidence: 99%

Diffusion and Point Defects in Silicon Materials

Bracht

2015

Lecture Notes in Physics

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“…Conversely, retarded diffusion of boron was observed below nitride films with the work of Osada et al [11] as a representative example. Similar effects were observed already before by Mizuo et al [12] and others during thermal nitridation of silicon. The only problem for associating the latter with stress effects is that nitride growth stops at a thickness of a few nanometers.…”

Section: Stress and Strain Effectssupporting

confidence: 76%

Upcoming Challenges for Process Modeling

Pichler

Simulation of Semiconductor Processes and Devices 2007

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In industrial environments, numerical simulation has become an indispensable tool for the development and optimization of especially front-end processes. In order to remain useful for future technology nodes, process simulation has to follow and partly even anticipate paradigm shifts of state-of-the-art processes and new materials for future nanoelectronic devices. Within this article, the author presents his personal view of unsolved and upcoming issues that have to be addressed and solved in future.

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“…Intrinsic phosphorus diffusion was demonstrated to be retarded under nitridation (vacancy injection) conditions [7,8]. From this retardation, it was concluded that the intrinsic P diffusion was entirely interstitially mediated [9].…”

Section: Introductionmentioning

confidence: 91%

Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures

et al. 2004

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We present experimental results of impurity and self-diffusion in an isotopically controlled silicon heterostructure extrinsically doped with phosphorus. As a consequence of extrinsic doping, the concentration of singly negatively charged native defects is enhanced and the role of these native defect charge states in the simultaneous phosphorus and Si self-diffusion can be determined. Multilayers of isotopically controlled 28 Si and natural silicon enable simultaneous analysis of 30 Si self-diffusion into the 28 Si enriched layers and phosphorus diffusion throughout the multilayer structure. An amorphous 260 nm thick Si cap layer was deposited on top of the Si isotope heterostructure. The phosphorus ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer, preventing the generation of excess native defects and enabling the determination of the Si self-diffusion coefficient and the phosphorus diffusivity under equilibrium conditions. These samples were annealed at temperatures between 950 and 1100 °C to study the diffusion. Detailed analysis of the diffusion process was performed on the basis of a P diffusion model which involves neutral and positively charged mobile P species and neutral and singly negatively charged self-interstitial.

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Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si

Cited by 81 publications

References 11 publications

Diffusion and Point Defects in Silicon Materials

Diffusion and Point Defects in Silicon Materials

Upcoming Challenges for Process Modeling

Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures

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