Effect of SiN Treatment on Optical Properties of In
                x
            Ga1−x
            N/GaN MQW Blue LEDs

Benzarti, Z.; Sekrafi, Tarek; Bougrioua, Z.; Khalfallah, Ali; Jani, B. El

doi:10.1007/s11664-017-5383-2

Cited by 19 publications

(17 citation statements)

References 32 publications

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“…Haffouz et al [9], reported that in situ SiN treatment of sapphire substrates improved the optical properties of GaN grown by MOCVD. Recently, Benzarti et al [10], reported an increase in the blue emission of MQW LEDs using SiN treatment compared to that of the same MQW device grown on a conventional GaN buffer layer.…”

Section: Introductionmentioning

confidence: 99%

A study of the effects of SiN treatment on the GaN refractive index

Chalabi,

Laifi,

Bchetnia

et al. 2024

Preprint

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In the present study, both the GaN buffer layer approach and the sapphire SiN treatment method were used to develop GaN films by metalorganic chemical vapor deposition (MOCVD) on a c-plane (0001) sapphire substrate. The growth was controlled in situ by 632.8 nm laser reflectometry. The GaN-grown layer structure was investigated via high-resolution X-ray diffraction (HRXRD). The GaN structural properties improved upon SiN treatment. In addition, spectroscopic transmittance was used to determine the change in the bandgap energy of GaN upon SiN treatment. Spectroscopic ellipsometric (SE) data (ψ and Δ) acquired in the wavelength range 400–1700 nm, were analyzed using a multilayer approach. The extracted refractive indices were found to follow a Cauchy-type dispersion. Upon SiN treatment, there is a blueshift and a decrease in the refractive index. At 600 nm, the GaN refractive index decreases from 2.395 to 2.374. The SE refractive indices measurements agree with the spectroscopic reflectometry (SR) results.

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Section: Introductionmentioning

confidence: 99%

A study of the effects of SiN treatment on the GaN refractive index

Chalabi,

Laifi,

Bchetnia

et al. 2024

Preprint

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“…The incorporation of indium into InGaN is sensitive to several growth conditions, such as temperature, growth rate, flux of sources, pseudo-template characteristic effect, etc. [7,8]. Ammonia is an important gas source in the MOCVD-based growth of GaN-based materials; usually, an increase in the ammonia flow rate is considered to have a positive effect on indium incorporation, because a high V/III ratio is often beneficial to the incorporation of group III atoms [9,10].…”

Section: Introductionmentioning

confidence: 99%

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

et al. 2023

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In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes were explored. Different emission peak characteristics were observed in temperature-dependent photoluminescence (TDPL) examination, which showed significant structural changes in InGaN layers and in the appearance of composite structures of InGaN/GaN quantum wells and quantum-dot-like centers. It was shown that these changes are caused by several effects induced by ammonia, including both the promotion of indium corporation and corrosion from hydrogen caused by the decomposition of ammonia, as well as the decrease in the surface energy of InGaN dot-like centers. We carried out detailed research to determine ammonia’s mechanism of action during InGaN layer growth.

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“…At present, InGaN/GaN multi-quantum wells are usually grown on inexpensive sapphire substrates through heteroepitaxy, whose performances are limited by two obstacles. First, due to the large lattice mismatch and thermal mismatch between sapphire and GaN, the GaN epitaxial material will have a large number of threading dislocations, and the dislocation density can reach as high as 10 8 –10 10 cm −2 [ 9 ]. They act as non-radiative recombination centers of carriers, resulting in a decrease in the luminescence efficiency of the material [ 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

et al. 2023

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GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through the temperature-dependent (TD) PL spectra, it was found that when the cap layer was too thick, the localized states of the quantum wells were relatively non-uniform. The thicker the well layer, the worse the uniformity of the localized states. Furthermore, through micro-area fluorescence imaging tests, it was found that when the cap layer was too thick, the luminescence quality of the quantum well was worse. In summary, the uniformity of the localized states in the quantum wells and the luminescence characteristics of the quantum wells could be improved when a relatively thin cap layer of the quantum well was prepared during the growth. These results could facilitate high efficiency QW preparation, especially for green LEDs.

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Effect of SiN Treatment on Optical Properties of In x Ga1−x N/GaN MQW Blue LEDs

Cited by 19 publications

References 32 publications

A study of the effects of SiN treatment on the GaN refractive index

A study of the effects of SiN treatment on the GaN refractive index

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

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