Effect of slurry flow rates on tungsten removal optimization in chemical mechanical planarization

Liau, Leo Chau‐Kuang; Lin, Kuen‐Song

doi:10.1016/j.microrel.2023.115021

Microelectronics Reliability

2023

DOI: 10.1016/j.microrel.2023.115021

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Effect of slurry flow rates on tungsten removal optimization in chemical mechanical planarization

Leo Chau‐Kuang Liau

Kuen‐Song Lin

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2024

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Cited by 2 publications

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Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives

Chen,

Zhang,

Zhao

et al. 2024

J. Phys. D: Appl. Phys.

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During the past decades, high-performance devices and setups have been widely used in the fields of precision optics, semiconductors, microelectronics, biomedicine, optoelectronics and aerospace. It is a challenge to achieve ultralow surface roughness free of damages. Due to the unique physicochemical properties of rare earths, ceria has garnered great progresses for atomic surfaces induced by chemical mechanical polishing. Compared with conventional mechanical removal by alumina and silica, rare earth abrasives achieve selective material removal on surface via their special chemical activity, without introducing microscopic scratches and defects. Nevertheless, polishing performance of rare earth abrasives depends on series of factors, e.g. size of abrasive particles, microscale topological structure, configuration of chemical slurry, auxiliary energy fields etc. As a result, it is significant to conduct a comprehensive review to understand state-of-the-art polishing technologies. This review summarizes the effect of polishing slurries composed of different rare earth abrasives on polishing performance under different conditions. Additionally, various energy-assisted polishing strategies are discussed using diverse kinds of rare earth abrasives for distinct polishing forms. Finally, future directions of polishing on rare earth abrasives are addressed.

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Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives

Chen,

Zhang,

Zhao

et al. 2024

J. Phys. D: Appl. Phys.

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Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization

Gamagedara,

Roy

2024

Lubricants

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Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough surface by combining several functions of tribology (friction, lubrication), chemistry, and electrochemistry (corrosion, wear, tribo-corrosion). The surface layer of interest is structurally weakened by the chemical and/or electrochemical reactions of selected additives in a polishing slurry, and the modified surface is flattened by the abrasion of a polishing pad with or without abrasive particles. The chemically active CMP slurry also serves as a lubricant for polishing and enables planarization at a microscopic level while avoiding the formation of defects at the processed surface. Applications of CMP are wide-ranging in various material-processing technologies and, specifically, it is a critical manufacturing step of integrated circuits. The CMP of metals is a significant part of this processing scheme and is associated with highly complex tribo-electrochemical mechanisms that are now additionally challenging due to various new requirements of the advanced technology nodes. The present review examines the current statuses of experimental strategies for collecting important mechanistic details of metal CMP that are necessary to design and assess CMP consumables. Both traditional and underexplored experimental techniques are discussed with illustrative results, including many previously unpublished findings for certain CMP systems of current interest.

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Effect of slurry flow rates on tungsten removal optimization in chemical mechanical planarization

Cited by 2 publications

References 21 publications

Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives

Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives

Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization

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