2014
DOI: 10.1007/s13391-013-3050-1
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Sm-substitution on structural, electrical and magnetic properties of BiFeO3

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

2
22
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 53 publications
(24 citation statements)
references
References 31 publications
2
22
0
Order By: Relevance
“…Multiferroic materials exhibit ferroic order parameters simultaneously, namely ferroelectricity, ferromagnetism and ferroelasticity, in the same phase [2] [3]. These materials have been widely studied in recent years because of their potential applications in new generations of memory devices, magnetic field sensors, etc.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Multiferroic materials exhibit ferroic order parameters simultaneously, namely ferroelectricity, ferromagnetism and ferroelasticity, in the same phase [2] [3]. These materials have been widely studied in recent years because of their potential applications in new generations of memory devices, magnetic field sensors, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Although BiFeO 3 (BFO) materials show potential in several applications, some of their drawbacks still need to be resolved, such as large dielectric loss and high leakage current, which are induced by oxygen vacancy, non-stoichiometry and valence fluctuation of Fe ions at room temperature [2]. However, because of the higher leakage current in the bulk BFO, it was difficult to measure the ferroelectric properties of BFO at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…5 For example, it was observed an increase of spontaneous magnetization and magnetoelectric coupling in samarium modified bismuth ferrite (i.e., Bi 1 x Sm x FeO 3 ). 6,7 Single-phase bulk BiFeO 3 exhibits a rhombohedral structure with space group R3c, where all ions are displaced along the (111) c direction of the ideal perovskite lattice and the oxygen octahedra surrounding the transition-metal cations are rotated alternately clockwise and counterclockwise about this (111) c direction. 8 The dielectric properties of pure BFO are caused by phonon mode softening and at higher temperatures by Maxwell-Wagner relaxation.…”
mentioning
confidence: 99%
“…As the value of concentration (x) increases, bulk resistance (R b ) increases which again indicates the decrease in conductivity with increase in concentration. Again, the decrease in R b with rise in temperature is normally observed in semiconductors [34]. Figure 9 shows the effect of frequency on the value of M 0 at selected temperature 350°C for different studied samples.…”
Section: Impedance Analysismentioning
confidence: 61%