Effect of Sn content on the electrical and optical properties of Ge1−xSnxSe3 glasses

Fadel, M.; Sedeek, K.; Hegab, N.A.

doi:10.1016/s0042-207x(00)00144-5

Cited by 27 publications

(20 citation statements)

References 20 publications

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“…4 The strong, medium and transport ranges of the measured T and R spectra, the two envelopes R M (k) and R m (k) for Ge 1 Se 2 thin film and the measured substrate transmittance T s (k) and reflectance R s (k) spectra The calculated values of absorption coefficient for the prepared films are of the order of *10 5 cm -1 which is consistent with that previously published [36]. Furthermore, the absorption coefficient of (Ge 1 Se 2 ) 1-x Sn x films obeyed the rule of indirect transition which is described by the following expression [35][36][37][38].…”

Section: Resultssupporting

confidence: 86%

“…Cauchy's dispersion relationship in the form of n = a ? bk -2 (where a is the intercept and b is the slope of the linear relation between n and k -2 ) successfully extrapolates the wavelength dependence of the refractive index over the whole measurement range [36][37][38]. Figure 5 and its inset investigate both the n and k values as a function of the incident photon energy for different compositions of (Ge 1 Se 2 ) 1-xSn x films.…”

Section: Resultsmentioning

confidence: 62%

“…1 is assumed to be an indication on the degree of structural randomness of amorphous semiconductors. The sample with high structural disorder has a small value of b parameter [38].…”

Section: Resultsmentioning

confidence: 99%

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On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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Different compositions of amorphous Sn x (GeSe) 100-x (0.0 B x B 0.12 at.%) thin films were deposited onto glass substrates by the thermal evaporation technique. The optical constants (n and k) and film thicknesses of Sn x (GeSe) 100-x thin films were obtained based only on their measured reflectance spectra in the wavelength range 300-2500 nm. It was found that the refractive index (n) increased while the optical energy gap (E g ) decreased with increasing tin content. The possible optical transition in these films obeys the allowed non-direct transitions. The obtained results were discussed in terms of the electronic polarizability (a e ). The dispersion parameters [the single-oscillator energy (E 0 ) and the dispersion energy (E d )] were obtained by fitting the refractive index according to Wemple and Di-Domenico model. The third-order nonlinear optical susceptibility v (3) was calculated with the help of E 0 and E d values. The obtained values of v (3) are too high, indicating that the films under study are interesting materials for nonlinear optical devices.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 62%

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On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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“…4b. The straight line obtained by least square fitting indicates that V th decreases exponentially in the investigated temperatures and satisfying the following Arrhenius's equation [26]:…”

Section: Switching Phenomenonmentioning

confidence: 80%

“…It is observed that the mean value of the threshold voltage V th decreases exponentially with increasing the temperature. This trend is a common feature in many memory switching devices above room temperature [26,27] and can be explained on the basis of a configurationally free-energy diagram [28], according to which the decrease in V th is due to the decrease of the energy barrier required for crystallization of a sample with the increase in temperature. Also, at the higher temperature, the charged defect centers are filled up by thermally excited charge carriers, which are in addition to fieldinjected carriers, resulting to the decrease in switching voltage [29,30].…”

Section: Switching Phenomenonmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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Temperature-dependent electrical transport mechanism in amorphous Ge₂Sb₂Te₅films

Wang

2016

Phys. Status Solidi B

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We study the electrical transport mechanism of amorphous Ge2Sb2Te5 (GST) phase‐change memory material. Amorphous GST films with 10–100 nm thicknesses were fabricated in trilayer geometry by using metal top and bottom electrodes. The temperature and voltage bias dependences of the electrical conductance were measured and analyzed using different models. Thermally activated conductance was observed at high temperatures. The estimated activation energy Ea and carrier density n were 0.36–0.45 eV and ∼1018cm−3, respectively. With a decrease in temperature, variable‐range‐hopping (VRH) conductivity was induced in moderate temperature range (150–250 K), which was associated with the diffusive regime. At low temperatures (Tthinmathspace

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Effect of Sn content on the electrical and optical properties of Ge1−xSnxSe3 glasses

Cited by 27 publications

References 20 publications

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Memory switching of ZnGa2Te4 thin films

Temperature-dependent electrical transport mechanism in amorphous Ge₂Sb₂Te₅films

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Effect of Sn content on the electrical and optical properties of Ge1−xSnxSe3 glasses

Cited by 27 publications

References 20 publications

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Memory switching of ZnGa2Te4 thin films

Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5films

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Product

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Temperature-dependent electrical transport mechanism in amorphous Ge₂Sb₂Te₅films