“…7, which explains the need for two separate transmission coefficient expressions. The oxide electric field, for a tunnel capacitor submitted to a V FG − V B potential difference, can be written as 35 :where V FB is the flatband voltage of the capacitor, t ox its oxide thickness, ψ S and ψ FG the surface potentials of the substrate and floating-gate respectively.Figure 7Upper part of the band diagram of the tunnel capacitor. According to the sign of V ox (and thus the value of V CG ), the role of the cathode can be either played by the floating gate ( V ox < 0) or the substrate ( V ox > 0).…”
Section: Resultsmentioning
confidence: 99%
“…Further understanding could probably be achieved in the future through time-dependent modelling of the different physical phenomena involved during the laser pulses (i.e. interaction of charge carriers with laser-generated photons as well as with the silicon lattice 35–38 through Monte-Carlo simulations). It would allow, in particular, the calculation of the energy distribution of laser-generated carriers which plays an essential role in the tunnel transit of the latter, as the strong dependence of the growth parameter C with laser intensity has likely shown.…”
The behaviour of semiconductor materials and devices subjected to femtosecond laser irradiation has been under scrutiny, for many reasons, during the last decade. In particular, recent works have shown that the specific functionality and/or geometry of semiconductor devices, among which non-volatile memory (NVM) devices hold a special place, could be used to improve the knowledge about ultrafast laser-semiconductor interactions. So far, such an approach has been applied to draw conclusions about the spatio-temporal properties of laser propagation in bulk materials. Here, by comparing the evolution of the electrical characteristics of Flash cells under the cumulative effect of repeated femtosecond laser pulses with first-order physical considerations and TCAD (Technology Computer Aided Design) simulations, we clearly establish the role of the carriers created by nonlinear ionization on the functionality of the structures. The complete electrical analysis informs indirectly on the energy of the laser-produced free-carriers which, to date, was almost inaccessible by an experimental method applicable to the bulk of a material. Establishing the link between the carrier energy and laser parameters is of major importance to improve the comprehension of the nonlinear ionization mechanisms associated to intense laser-semiconductor interactions and applied in various fields from microelectronics to laser micromachining.
“…7, which explains the need for two separate transmission coefficient expressions. The oxide electric field, for a tunnel capacitor submitted to a V FG − V B potential difference, can be written as 35 :where V FB is the flatband voltage of the capacitor, t ox its oxide thickness, ψ S and ψ FG the surface potentials of the substrate and floating-gate respectively.Figure 7Upper part of the band diagram of the tunnel capacitor. According to the sign of V ox (and thus the value of V CG ), the role of the cathode can be either played by the floating gate ( V ox < 0) or the substrate ( V ox > 0).…”
Section: Resultsmentioning
confidence: 99%
“…Further understanding could probably be achieved in the future through time-dependent modelling of the different physical phenomena involved during the laser pulses (i.e. interaction of charge carriers with laser-generated photons as well as with the silicon lattice 35–38 through Monte-Carlo simulations). It would allow, in particular, the calculation of the energy distribution of laser-generated carriers which plays an essential role in the tunnel transit of the latter, as the strong dependence of the growth parameter C with laser intensity has likely shown.…”
The behaviour of semiconductor materials and devices subjected to femtosecond laser irradiation has been under scrutiny, for many reasons, during the last decade. In particular, recent works have shown that the specific functionality and/or geometry of semiconductor devices, among which non-volatile memory (NVM) devices hold a special place, could be used to improve the knowledge about ultrafast laser-semiconductor interactions. So far, such an approach has been applied to draw conclusions about the spatio-temporal properties of laser propagation in bulk materials. Here, by comparing the evolution of the electrical characteristics of Flash cells under the cumulative effect of repeated femtosecond laser pulses with first-order physical considerations and TCAD (Technology Computer Aided Design) simulations, we clearly establish the role of the carriers created by nonlinear ionization on the functionality of the structures. The complete electrical analysis informs indirectly on the energy of the laser-produced free-carriers which, to date, was almost inaccessible by an experimental method applicable to the bulk of a material. Establishing the link between the carrier energy and laser parameters is of major importance to improve the comprehension of the nonlinear ionization mechanisms associated to intense laser-semiconductor interactions and applied in various fields from microelectronics to laser micromachining.
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