Effect of source frequency and pulsing on the SiO₂etching characteristics of dual-frequency capacitive coupled plasma

Abstract

A study on the etching characteristics of magnetic tunneling junction materials using DC pulse-biased inductively coupled plasmas

Time-varying mechanism of ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma

“…and O − . On the basis of the electron energy dependence of the dissociative attachment cross section for each negative ion [26][27][28] and the negative-ion measurement via laser photodetachment in a CCP 29,30) with similar gas composition ratio to our study, the F − ion produced through reaction (7) in Table I was chosen as the major negative ions in this analysis and the other negative ions were not considered. Some of the positive ions were lost via recombination with negative ions, according to reaction pathways and rate constants, which are shown in Table I as reactions ( 8)- (12).…”

“…5) To solve this issue, a pulse-operated dual-frequency capacitively coupled plasma (DF-CCP) is widely used, where not only independent control of the plasma density and ion energy but also moderate gas dissociation and charge-up suppression are realized. [6][7][8][9] Another challenge in HAR etching is improvement of throughput, i.e. etch rate.…”

Evaluation of the spatial structure of multiline emission in a capacitively coupled plasma using tomographic reconstruction

“…In this study, we developed a method based on the tomography technique to derive a spatial emission profile from 2D emission images of 40 MHz capacitively coupled plasma (CCP), which has been widely used in high-aspectratio dielectric etching tools. 6,10,[24][25][26] Images were acquired from multiple directions using 2D image sensors. By combining image-space telecentric lenses and bandpass filters with the image sensors, 2D spectral images from different emission directions and lines were obtained.…”

Effects of Bias Pulsing on Etching of SiO<SUB>2</SUB> Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks

“…and off, which satisfies these requirements by reducing the plasma induced damage via charge accumulation. 9 For dielectric etching processes, schemes of multilevel hard mask (MLHM) structures have been typically used for nano-scale patterning because of the difficulties in immediately etching the underlayer using a photoresist (PR) mask. An MLHM structure is generally composed of an SiO 2 , Si 3 N 4 or SiON inorganic hard mask, an amorphous carbon layer (ACL), and another hard mask layer such as SiO 2 and Si 3 N 4 .…”

“…For example, pulsing of high frequency source power (60 MHz) was efficient in increasing the etch selectivity of SiO 2 layer to hard-mask layer. 9 Few detailed reports have been presented on the effects of bias pulsing during plasma etching of dielectric layers in DFS-CCP etcher systems, despite the widespread use of these applications in the industry. [14][15][16] In this study, bias pulsing using an LF power of 2 MHz which has the capability of continuous wave (CW)-and pulse-biasing was used for the etching process of the SiO 2 underlayer in C 4 F 8 /CH 2 F 2 /O 2 /Ar mixture gas chemistry.…”