2019
DOI: 10.15407/mfint.41.07.0941
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Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Abstract: Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indium oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe 2 O 3 targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe 2 O 3 target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet-Visible-Infrared (UV-Vis-IR) spectroscopy, X-ray diffra… Show more

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Cited by 6 publications
(3 citation statements)
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“…Comparison of transmittance curves of the ITO50:Al2O3 (PHS) film and ITO50 (PHS) thin film deposited at Q(O2) = 0.1 sccm showed significant increases in τ when the ITO50 thin film was doped with Al2O3, since aluminum oxide is an additional source of oxygen during filling of oxygen vacancies. The same tendency was observed for iron-doped indium-saving ITO thin films [14].…”
Section: Optical and Electrical Propertiessupporting
confidence: 77%
See 1 more Smart Citation
“…Comparison of transmittance curves of the ITO50:Al2O3 (PHS) film and ITO50 (PHS) thin film deposited at Q(O2) = 0.1 sccm showed significant increases in τ when the ITO50 thin film was doped with Al2O3, since aluminum oxide is an additional source of oxygen during filling of oxygen vacancies. The same tendency was observed for iron-doped indium-saving ITO thin films [14].…”
Section: Optical and Electrical Propertiessupporting
confidence: 77%
“…Therefore, indium-saving ITO thin films which maintain ITO's electrical and optical properties, as well as being cost-effective, have been investigated in recent years [6][7][8][9][10][11][12]. In order to improve optoelectronic properties of the indium-saving ITO thin films, the latter were doped with different oxides [13][14][15]. This allowed the achievement of low resistivity and high transmittance in the visible range and made indium-saving ITO thin films doped with titanium, iron and aluminum an alternative to conventional ITO (In2O3-10 mass% SnO2).…”
Section: Introductionmentioning
confidence: 99%
“…17) Optical, Electrical Properties and Structure of Multilayer Iron-Doped IndiumTin Oxide Thin Films Sputtered on Preheated Glass Substrates the In 4 Sn 3 O 12 phase was reported to be observed in the composition range of 47.959.3 mol% SnO 2 or with Sn contents between 40 and 60 mol%. Iron oxide or any other secondary impurity phases were not revealed both: in the ML ITO50:Fe 2 O 3 and in the SL ITO50:Fe 2 O 3 XRD patterns,17,18) it means that 2.4 « 0.7 mol% Fe embedded in ML ITO50 thin film (in In 4 Sn 3 O 12 crystal) and formed ordered substitutional sites within the lattice and iron doping didn't change the structure of film. The result reported by Xu and Li46) suggested that 5 mol% Fe-doping could not change the structure of ZnO thin films.…”
mentioning
confidence: 95%