2016
DOI: 10.1088/0022-3727/49/34/345002
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Effect of sputtering pressure on stacking fault density and perpendicular magnetic anisotropy of CoPt alloys

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Cited by 3 publications
(2 citation statements)
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“…16 Oe), velocities that differ in more than two orders of magnitude are found (4.1 × 10 −3 m s −1 for 3 × 10 −6 Torr and 2.8 × 10 −5 m s −1 for 1 × 10 −5 Torr). This indicates that the DW velocity in the creep regime is not only influenced by the Ar pressure during deposition, as previously pointed out by other authors [11,20,32], but also by the base pressure prior to deposition. This parameter of the growth process defines the degree of purity of the gas inside the chamber which impacts on the quality of the obtained materials.…”
Section: Domain Wall Velocity and Coercive Fieldsupporting
confidence: 82%
“…16 Oe), velocities that differ in more than two orders of magnitude are found (4.1 × 10 −3 m s −1 for 3 × 10 −6 Torr and 2.8 × 10 −5 m s −1 for 1 × 10 −5 Torr). This indicates that the DW velocity in the creep regime is not only influenced by the Ar pressure during deposition, as previously pointed out by other authors [11,20,32], but also by the base pressure prior to deposition. This parameter of the growth process defines the degree of purity of the gas inside the chamber which impacts on the quality of the obtained materials.…”
Section: Domain Wall Velocity and Coercive Fieldsupporting
confidence: 82%
“…However, a cleaner environment prior to sample deposition leads to noticeably higher DW velocity. This indicates that not only Ar pressure during deposition is relevant to determine the properties of the obtained material 5,12,25 , but also the base pressure prior to deposition, since it defines the degree of gas purity within the chamber and may strongly affect also the purity of the obtained materials.…”
Section: Discussionmentioning
confidence: 99%