Effect of sputtering pressure on microstructure and bolometric properties of Nb:TiO2−x films for infrared image sensor applications

Reddy, Y. Ashok Kumar; Shin, Young Bong; Kang, In-Ku; Lee, Hee Chul

doi:10.1063/1.4940957

Cited by 13 publications

(5 citation statements)

References 33 publications

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“…The filtering methods mainly used in frequency domain processing are high-pass and low-pass filters, band-pass and band-stop filtering, and homomorphic filtering. Specific algorithms include Butterworth and Gaussian high/low pass filters [20].…”

Section: Frequency Domain Image Enhancementmentioning

confidence: 99%

Retracted: Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Zhu

Zhou³

et al. 2024

IEEE Access

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CMOS image sensor is a rapidly developing image sensor product in the past decade. Relying on the advantages of process compatibility with standard CMOS process, CMOS image sensor integrates analog photoelectric photosensitive circuit and digital signal processing circuit to become a small and powerful system on chip. This article mainly studies the explosive growth of image sensors in smart government technology and economic scale. The main purpose of this article is to study the technical application of image sensors, reduce the administrative cost of social governance, improve the level of government governance, benefit the public, and realize the requirements of smart government affairs and rapid economic development of the city. This study tested the static performance of the analog-to-digital conversion circuit by inputting a limited number of sampling points, and its integral nonlinearity and differential nonlinearity were both less than 1LSB. The bandgap reference circuit provides a reference level for the entire system. It uses two PNP-type bipolar transistors parasitic in the CMOS process to achieve a temperature and voltage-independent bandgap reference voltage through the feedback of the operational amplifier. It is ideal for use In the case of resistance simulation, its accuracy reaches 16.6ppm. The scanning method of the pixel array uses multi-sampling technology to increase the dynamic range of the sensor by N 2 times. The correlated sub-sampling technology eliminates the fixed pattern noise between pixel units. The use of pipelined analog-to-digital converters can achieve good resolution, speed and area compromise.Through the realization and simulation of transistor-level circuits, the performance of each part of the system meets the requirements of design and application.

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Section: Frequency Domain Image Enhancementmentioning

confidence: 99%

Retracted: Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Zhu

Zhou³

et al. 2024

IEEE Access

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“…Here, the oxygen vacancies in the TiO 2‐x films tend to generate the sub valence states of titanium at the lower energy region of Ti‐2p 3/2 and Ti‐2p 1/2 . Thus, it creates the charge imbalance and Ti 3+ form TiO 2‐x 39 . It has been also seen that there was no significant shift to higher binding energy in the Ti‐2p peaks as well O‐1s peak for all films.…”

Section: Resultsmentioning

confidence: 81%

“…Thus, it creates the charge imbalance and Ti 3+ form TiO 2-x . 39 It has been also seen that there was no significant shift to higher binding energy in the Ti-2p peaks as well O-1s peak for all films.…”

Section: Surface Morphology Of Tio 2-x Thin Filmsmentioning

confidence: 74%

Effect of substrate temperature and annealing on the growth of TiO_2‐x thin films deposited by using DC‐magnetron sputtering technique

Jana,

Debnath,

Putta

et al. 2023

Surface & Interface Analysis

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In this study, the effect of annealing on the structural, surface morphology and chemical structure of titanium suboxide (TiO2‐x) thin films has been investigated. TiO2‐x films had been grown on Si substrates by DC‐magnetron sputtering with different sputter powers (75 and 100 W) at room temperature (RT) and 200°C substrate temperature (ST). The films were subsequently annealed for 1 h at 300, 400 and 500°C in vacuum. The impact of ST, post‐annealing and sputter power on crystallinity, surface morphology and chemical state of the films were studied. Grazing incidence X‐ray diffraction (GIXRD) data revealed that the films were amorphous or exhibited a very low crystalline structure while deposited at RT and even after annealing. Moreover, the films showed crystallinity while deposited at ST and exhibited an anatase‐rutile (A‐R) mix phase from anatase (A) annealed at 300°C (75 W at ST). X‐ray reflectivity (XRR) data showed that the mass density of the films increased with the annealing temperature. Images obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) revealed that post‐annealing increased the surface roughness of the films. X‐ray photoelectron spectroscopy (XPS) analysis indicated the films were sub stoichiometric. It was also indicated that Ti was in the form of Ti4+ and Ti3+ states in all films, and the proportion of Ti4+ slightly increased after post‐annealing at 500°C. The findings showed that post‐annealing, ST and sputtering power can all affect the growth of TiO2‐x films.

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“…Test devices of as-deposited and oxygen-annealed samples were fabricated through a UV-lithography process in order to study the bolometric properties of the resistivity, the TCR, and the 1/f noise parameter. The details of the test device fabrication method followed those in an earlier report [27]. Finally, to check the sun-burn effect, both the as-deposited and annealed samples were exposed at 75 °C and 100 °C for 10 min.…”

Section: Methodsmentioning

confidence: 99%

Improvement of the thermal stability of Nb:TiO_2−xsamples for uncooled infrared detectors

Reddy¹,

Kang²,

Shin³

et al. 2017

J. Phys. D: Appl. Phys.

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In order to reduce the sun-burn effect in a sample of the bolometric material Nb:TiO2−x, oxygen annealing was carried out. This effect can be examined by comparing thermal stability test results between the as-deposited and oxygen-atmosphere-annealed samples under high-temperature exposure conditions. Structural studies confirm the presence of amorphous and rutile phases in the as-deposited and annealed samples, respectively. Composition studies reveal the offset of oxygen vacancies in the Nb:TiO2−x samples through oxygen-atmosphere annealing. The oxygen atoms were diffused and seemed to occupy the vacant sites in the annealed samples. As a result, the annealed samples show better thermal stability performance than the as-deposited samples. The universal bolometric parameter (β) values were slightly decreased in the oxygen-annealed Nb:TiO2−x samples. Although bolometric performance was slightly decreased in the oxygen-annealed samples, high thermal stability would be the most essential factor in the case of special applications, such as the military and space industries. Finally, these results will be very useful for reducing the sun-burn effect in infrared detectors.

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Effect of sputtering pressure on microstructure and bolometric properties of Nb:TiO2−x films for infrared image sensor applications

Cited by 13 publications

References 33 publications

Retracted: Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Retracted: Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Effect of substrate temperature and annealing on the growth of TiO_2‐x thin films deposited by using DC‐magnetron sputtering technique

Improvement of the thermal stability of Nb:TiO_2−xsamples for uncooled infrared detectors

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Effect of sputtering pressure on microstructure and bolometric properties of Nb:TiO2−x films for infrared image sensor applications

Cited by 13 publications

References 33 publications

Retracted: Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Retracted: Explosive Growth of Image Sensors in Smart Government Technology and Economic Scale

Effect of substrate temperature and annealing on the growth of TiO2‐x thin films deposited by using DC‐magnetron sputtering technique

Improvement of the thermal stability of Nb:TiO2−xsamples for uncooled infrared detectors

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Product

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About

Effect of substrate temperature and annealing on the growth of TiO_2‐x thin films deposited by using DC‐magnetron sputtering technique

Improvement of the thermal stability of Nb:TiO_2−xsamples for uncooled infrared detectors