Effect of Sr adsorption on stability of and epitaxial SrTiO<sub>3</sub> growth on Si(001) surface

Liang, Yong; Gan, Shupan; Wei, Yi; Gregory, R.

doi:10.1002/pssb.200666807

Cited by 17 publications

(11 citation statements)

References 14 publications

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“…This passivation role of the Sr depends strongly on the composition of the surface. At a 1/2 ML of Sr, the silicon (001) surface dangling bonds are passivated, and the reactivity of the surface to oxygen is reduced 65. This reduced reactivity with oxygen is critical in promoting the epitaxy of alkaline earth oxides and SrTiO 3 on silicon.…”

Section: Growthmentioning

confidence: 99%

Crystalline Oxides on Silicon

et al. 2010

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This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface. An interdisciplinary approach involving MBE, advanced real-space structural characterization, and first-principles theory has led to a detailed understanding of the process by which the interface between crystalline oxides and silicon forms, the resulting structure of the interface, and the link between structure and functionality. Potential applications in electronics and photonics are also discussed.

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Section: Growthmentioning

confidence: 99%

Crystalline Oxides on Silicon

et al. 2010

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“…Strontium and Ba have uniquely reactive properties that are found to passivate the silicon surface against oxidation sufficient to initiate heteroepitaxy (11). We are not aware of cases of successful oxide heteroepitaxy without these alkaline earth layers.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Atomic Layer Deposition for Epitaxial Oxides on Silicon

Willis

Zhang²

2010

ECS Trans.

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Thin films of crystalline oxides integrated with silicon are of interest for novel devices that utilize the rich variety of functional properties of oxide materials. Growth of crystalline oxides on silicon requires careful control of a nanometer thin transition region to avoid deleterious side reactions such as oxidation of the substrate. Submonolayer surface reconstructions of alkaline earth metals such as Sr are key to controlling the interface for successful growth. Previously, this has only been accomplished using molecular beam epitaxy growth methods, but there is interest to create an alternative process based on atomic layer deposition. In this work we demonstrate the successful deposition of the critical (2x1) Sr/Si reconstruction using SrO ALD deposition combined with oxide desorption. The results show that ALD based crystalline oxide heteroepitaxy is promising.

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“…2,3). This ionic bonding picture also explains the observed stability of the 2 9 1 0.5 ML structure against oxidation which is the critical role of the Sr layer [27]: at 0.5 ML, there is one Sr for every dimer, so with two donated valence electrons per Sr, all the dimer dangling states are completely filled, and this results in a electronically gapped (semiconducting) surface (See Fig. 7) [16,17,32].…”

Section: Chemistry Of Sr On Si (001)mentioning

confidence: 81%

“…A variety of experimental techniques have been used to characterize the submonolayer Sr-on-Si surface, including reflection high energy electron diffraction (RHEED) [5,14,15], low energy electron diffraction (LEED) [18], scanning tunneling microscopy (STM) [24][25][26], photo-emission spectroscopy (PES) [27], and synchrotron X-ray diffraction (XRD) [28]. For deposition at room temperature and for low Sr coverages up to 0.5 ML, electron diffraction indicates that the underlying Si surface retains the same 2 9 1 symmetry of the bare dimerized Si (001) surface [15].…”

Section: Review Of Key Experimentsmentioning

confidence: 99%

Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights

2012

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Crystalline metal oxides display a large number of physical functionalities such as ferroelectricity, magnetism, superconductivity, and Mott transitions. High quality heterostructures involving metal oxides and workhorse semiconductors such as silicon have the potential to open new directions in electronic device design that harness these degrees of freedom for computation or information storage. This review describes how first-principles theoretical modeling has informed current understanding of the growth mechanisms and resulting interfacial structures of crystalline, coherent, and epitaxial metal oxide thin films on semiconductors. Two overarching themes in this general area are addressed. First, the initial steps of oxide growth involve careful preparation of the semiconductor surface to guard against amorphous oxide formation and to create an ordered template for epitaxy. The methods by which this is achieved are reviewed, and possibilities for improving present processes to enable the epitaxial growth of a wider set of oxides are discussed. Second, once a heterointerface is created, the precise interfacial chemical composition and atomic structure is difficult to determine unambiguously from experiment or theory alone. The current understanding of the structure and properties of complex oxide/ semiconductor heterostructures is reviewed, and the main challenges to prediction-namely, (i) are these heterostructures in thermodynamic equilibrium or kinetically trapped, and (ii) how do the interfaces modify or couple to the degrees of freedom in the oxide?-are explored in detail for two metal oxide thin films on silicon. Finally, an outlook of where theoretical efforts in this field may be headed in the near future is provided.

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Effect of Sr adsorption on stability of and epitaxial SrTiO₃ growth on Si(001) surface

Cited by 17 publications

References 14 publications

Crystalline Oxides on Silicon

Crystalline Oxides on Silicon

(Invited) Atomic Layer Deposition for Epitaxial Oxides on Silicon

Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights

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Effect of Sr adsorption on stability of and epitaxial SrTiO3 growth on Si(001) surface

Cited by 17 publications

References 14 publications

Crystalline Oxides on Silicon

Crystalline Oxides on Silicon

(Invited) Atomic Layer Deposition for Epitaxial Oxides on Silicon

Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights

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Product

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Effect of Sr adsorption on stability of and epitaxial SrTiO₃ growth on Si(001) surface