Effect of stirring rate of electrolyte on properties of electrodeposited CdS layers

Electroplating of Semiconductor Materials for Applications in Large Area Electronics: A Review

“…For the three-electrode configuration, the potential difference is measured across the working and the reference electrodes, while the measured current is between the working and the counter electrodes. In general, other factors such as the pH of the electrolyte [18], applied deposition potential [13,14], deposition temperature [19], stirring rate [20], deposition current density, duration of deposition and thickness [21], underlying substrate [22], and concentration of ions in the deposition electrolyte [18] affects the electrodeposition process and the properties of the deposited layers. Recent publications have demonstrated the similarities between electrodeposited semiconductors using three-electrode and two-electrode electroplating configurations [23,24].…”

An investigation into the effect of rate of stirring of bath electrolyte on the properties of electrodeposited CdTe thin film semiconductors

“…In this study, an attempt was made to investigate the effect of rate of stirring of the electrolyte on the properties of CdTe material grown on glass/FTO and glass/FTO/CdS surfaces due to the lack of investigations carried out on this aspect in literature [2]. Further, this study is in concurrent with our previous work on "Effect of stirring rate of electrolyte on properties of electrodeposited CdS layers" in 2016 [3] and the principles related to transport of ions towards working electrode during electrodeposition is used for interpreting the results and understanding the effects of solution stirring on the properties of electrodeposited CdTe layers.…”

“…At present, the photovoltaic industry is stepping forward rapidly due to the emerging energy crisis all over the world. Amid the photovoltaic (PV) devices at intense investigations, the CdS/CdTe based solar cells have an imperious position owing to their high power conversion efficiencies [1][2][3][4]. In these devices, the CdTe material plays the most important role as the absorbing material of the device [1] having the near ideal energy band gap in the range of 1.45-1.50 eV [5][6][7] for a single band gap p-n junction.…”

Electrodeposition of CdS thin films under a magnetic field

“…11 (ahu) 2 versus hu plots are drawn and E g values are estimated by extrapolating the linear segment of each plot. 12 In this study (ahu) 2 versus hu plots and estimated band gaps are given in Figure 5 and Table 2, respectively. The energy band gaps of the films increased from 2.30 eV to 2.65 eV, proportionally, depending on the increasing of the magnitude and the frequency of the external magnetic field.…”