Effect of stoichiometry on diffusion of xenon in UO2

Miekeley, W.; Felix, F. W.

doi:10.1016/0022-3115(72)90080-3

Cited by 113 publications

(46 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The release of fission gas, mostly Xe and Kr, from UO 2 and spent fuels has been extensively studied since the middle of the 1960s due to the potential effects on the structural and mechanical properties of the fuel [1][2][3][4][5]. Another rare gas that is produced in-pile, is helium, but a much greater quantity would be produced under long term storage by alpha decay of actinides especially in the case of MOX fuels: the volume of fission gas generated in-pile is around 2500 cm 3 /rod STP -1.5% at/at iHM [6,7].…”

Section: Introductionmentioning

confidence: 99%

He migration in implanted UO2 sintered disks

Guilbert

Sauvage

Garcia

et al. 2004

Journal of Nuclear Materials

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

He migration in implanted UO2 sintered disks

Guilbert

Sauvage

Garcia

et al. 2004

Journal of Nuclear Materials

View full text Add to dashboard Cite

“…Due to its high impact on nuclear fuel performance the properties of Xe in UO 2±x have been extensively studied using a variety of theoretical 2,[6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] and experimental techniques [3][4][5][25][26][27][28][29][30][31] . Matzke et al [3][4][5] have published several reviews on this topic and concluded that Xe diffusion can be represented by an Arrhenius model, D = D 0 e −Ea/k b T , with activation energies (E a ) that depend on UO 2±x stoichiometry.…”

Section: Thermodynamicsmentioning

confidence: 99%

U and Xe transport in UO2±x: Density functional theory calculations

et al. 2011

View full text Add to dashboard Cite

The detrimental effects of the fission gas Xe on the performance of oxide nuclear fuels are well known. However, less well known are the mechanisms that govern fission gas evolution. Here, in order to better understand bulk Xe behavior (diffusion mechanisms) in UO2±x we calculate the relevant activation energies using density functional theory (DFT) techniques. By analyzing a combination of Xe solution thermodynamics, migration barriers and the interaction of dissolved Xe atoms with U, we demonstrate that Xe diffusion predominantly occurs via a vacancy-mediated mechanism. Since Xe transport is closely related to diffusion of U vacancies, we have also studied the activation energy for this process. In order to best reproduce experimental data for the Xe and U activation energies, it is critical to consider the active charge-compensation mechanism for intrinsic defects in UO2±x. Due to the high thermodynamic cost of reducing U 4+ ions, any defect formation occurring at a fixed composition, i.e. no change in UO2±x stoichiometry, always avoids such reactions, which, for example, implies that the ground-state configuration of an O Frenkel pair in UO2 does not involve any explicit local reduction (oxidation) of U ions at the O vacancy (interstitial).

show abstract

“…The experimental data on xenon bulk diffusion in such crystals exists for the temperatures below 2000 K [16]. Thus, a direct comparison of the results of the present work with experimental data is impossible.…”

Section: Datamentioning

confidence: 59%

“…It could be necessary to investigate more complex diffusion mechanisms to explain the experimental data. Experiment [16] Potentials II + Basak-2003 Advances in Engineering Research, volume 133 nanocrystals of stoichiometric composition was studied. The nanocrystals had a free surface and were isolated in a vacuum.…”

Section: Datamentioning

confidence: 99%

Molecular Dynamics Simulation of Xenon Diffusion in UO2 Nanocrystals

Kichigina¹,

Nekrasov

Kupryazhkin

et al. 2017

Proceedings of the International Conference "Actual Issues of Mechanical Engineering" 2017 (AIME 2017)

View full text Add to dashboard Cite

Abstract-Diffusion of individual xenon atoms in the bulk of UO 2 nanocrystals with free surface is studied using the molecular dynamics approach. Two sets of the pair potentials of interaction of the Xe atom with uranium and oxygen ions are considered. For both sets, interstitial migration is observed, as well as the atom trapping in the uranium sites. However, the quantitative characteristics of these processes are found to be very different. The coefficients of Xe interstitial migration are obtained in the temperature range from 2400 K up to the melting point of the model crystals. The corresponding activation energies have the values of 2.5 eV and 2.2 eV depending on the interaction potentials. The results of the simulation are compared with the experimental data.

show abstract

Effect of stoichiometry on diffusion of xenon in UO2

Cited by 113 publications

References 12 publications

He migration in implanted UO2 sintered disks

He migration in implanted UO2 sintered disks

U and Xe transport in UO2±x: Density functional theory calculations

Molecular Dynamics Simulation of Xenon Diffusion in UO2 Nanocrystals

Contact Info

Product

Resources

About