2020
DOI: 10.1039/d0cp01727b
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Effect of strain and defects on the thermal conductance of the graphene/hexagonal boron nitride interface

Abstract: In-plane heterojunctions, obtained by seamlessly joining two or more nanoribbon edges of isolated two-dimensional atomic crystals such as graphene and hexagonal boron nitride, are emerging as nanomaterials for the development of future multifunctional devices.

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Cited by 30 publications
(16 citation statements)
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“…The effects of vacancy defects in grain boundary and strain on interfacial thermal conductivity of graphene-BN heterostructure nanosheet were shown in the theoretical works done by Son et al . 31 . However, vacancy defects were found as the leading cause of enhanced interfacial thermal conductance; however, with lower inherent thermal conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…The effects of vacancy defects in grain boundary and strain on interfacial thermal conductivity of graphene-BN heterostructure nanosheet were shown in the theoretical works done by Son et al . 31 . However, vacancy defects were found as the leading cause of enhanced interfacial thermal conductance; however, with lower inherent thermal conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…First, the overall VDOS of PDMS and h-BN is presented in Figure a for different DDs. From them, the VDOS characteristic peaks of h-BN are found to appear at about 18.4 and 44 THz, , while those of PDMS are located at frequencies of about 30–36 and 22 THz. In general, the high overlap between PDMS and h-BN means an effective phonon transport, which improves the λ i .…”
Section: Resultsmentioning
confidence: 99%
“…[145] The importance of γ strain for 𝑅 K is recently recognized for interfaces between 2D materials. [146,147] For heterojunctions formed under the hot press, the interdiffusion between two dissimilar materials can further form an alloy interface that can largely increase the 𝑅 K . [148] Despite decades of thermal studies on polycrystalline samples, few experimental studies can be found to reveal the 𝑅 K of a single GB.…”
Section: Thermal Measurements and Thermal Engineering Of Gbsmentioning
confidence: 99%