Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures

Subudhi, Pravat Kumar; Palo, Sangeeta; Sahu, Trinath

doi:10.1016/j.spmi.2012.01.007

Cited by 24 publications

(29 citation statements)

References 32 publications

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“…20 The sum over I stands for the interfaces (I 1 and I 3 ) which are assumed to be rough lying towards the substrate sides. 20,22 z I is the position corresponding to interfaces. The al-scattering arises from the barriers.…”

Section: Aip Advances 5 117232 (2015)mentioning

confidence: 99%

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

et al. 2015

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We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.

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Section: Aip Advances 5 117232 (2015)mentioning

confidence: 99%

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

et al. 2015

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“…1. The impurity and electron concentration distributions n D (z) and n(z) perpendicular to the interface plane, say, along zaxis, can be written respectively as [7]:…”

Section: Theorymentioning

confidence: 99%

“…For simplicity, we obtain an analytical expression for the potential profile V(z) by using a variational approach [7,11]. The subband energy levels E n and wave functions c n (z) are numerically obtained by calculating the transmission probability across V(z) with the use of multistep potential approximation [7,12]. At zero temperature the electrons on the Fermi surface contribute to the transport.…”

Section: Theorymentioning

confidence: 99%

“…In a system with more than one occupied subband energy levels, the role of intersubband interaction is vital in determining the subband mobility [4][5][6][7]. The intersubband interaction influences the mobility not only through the additional intersubband scattering rate matrix elements but also through the changes in the dielectric screening occurring in the intrasubband scattering rate matrix element [4][5][6][7]. Attempts have been made to study the effect of electric field on electron mobility in single and double quantum well structures [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…The well regions being alloy (InGaAs) layers, the effect of alloy disorder (Al-) scattering has been considered along with ionized impurity (Imp-) scattering and interface roughness (IR-) scattering. The screened scattering potentials are obtained by using the static dielectric response function within the random phase approximation (RPA) [4][5][6][7]11]. We analyze the changes in intrasubband and intersubband scattering rate matrix elements as a function of the electric field F. By varying F, the system can be transformed from double subband occupancy to single subband occupancy where a sudden enhancement in mobility is obtained due to the suppression of intersubband effects.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electric field induced enhancement of multisubband electron mobility in strained GaAs/InGaAs coupled quantum well structures

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Effect of Intersubband Interaction on Multisubband Electron Mobility in a Parabolic Quantum Well Under Applied Electric Field

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Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures

Cited by 24 publications

References 32 publications

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

Electric field induced enhancement of multisubband electron mobility in strained GaAs/InGaAs coupled quantum well structures

Effect of Intersubband Interaction on Multisubband Electron Mobility in a Parabolic Quantum Well Under Applied Electric Field

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