Effect of Strain on the Elastic, Electronic, and Magnetic Properties of Fluoro-Pervskite RbMnF3 and RbFeF3

Origin of semiconductor and half‐metallic behaviors in the perovskite materials RbXF3 (X = Co, Mn, Fe or V): A GGA + U approach

“…In this case, the original properties of materials may change [37,38]. On the other hand, the elastic constants, electronic structure, and magnetic properties of rubidium-based fluoro-perovskite ferromagnetic semiconductor RbMnF 3 and ferromagnetic half-metal RbFeF 3 under the strain were studied by first-principle methods [39]. High-order one-dimensional (1D) fermion in ferromagnetic RbFeF 3 [40].…”