2015
DOI: 10.1103/physrevlett.115.186801
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Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride

Abstract: We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to m… Show more

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Cited by 108 publications
(79 citation statements)
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“…[21,22] Graphene interactions with h-BN were described with the Kolmogorov Crespi (KC) potential [19] modified as described in Ref. 20, where the strength of the KC potential was doubled for C-N interactions and reduced to 60% for C-B ones. Also, since the C-C bond length depends on the chosen graphene potential, we adopted a slightly rescaled planar simulation cell size so that the graphene/h-BN size ratio exactly matches the experimental ratio ρ.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…[21,22] Graphene interactions with h-BN were described with the Kolmogorov Crespi (KC) potential [19] modified as described in Ref. 20, where the strength of the KC potential was doubled for C-N interactions and reduced to 60% for C-B ones. Also, since the C-C bond length depends on the chosen graphene potential, we adopted a slightly rescaled planar simulation cell size so that the graphene/h-BN size ratio exactly matches the experimental ratio ρ.…”
Section: Methodsmentioning
confidence: 99%
“…For each angle we constructed a sample as in Ref. 20 and carefully minimized its classical energy (T = 0), by allowing all atoms to relax their positions, while keeping at the same time the chosen overall alignment angle θ blocked by the periodic boundary conditions.…”
Section: Methodsmentioning
confidence: 99%
“…While translation of the top BN with respect to the bottom would change the overall stacking configuration, we observe nearly equivalent transport every ∆θ t = 120 • . This suggests translation does not play a significant role, and that the stacking configuration with no translational offset is the structural ground state at the aligned positions.In graphene aligned to a single BN layer, the staggered sublattice potential of the BN breaks inversion symmetry in the graphene layer for both 0 • and 60 • "aligned" orientations, resulting in a band gap at the PDP whose value is expected to scale with the magnitude of effective superlattice potential [13][14][15][16][17][18][19][20][21][22][23][24][25][26]. We conjecture that the asymmetry between θ t = 0 • and 60 • in our device correlates with the transition between the broken inversion symmetry structure at θ t = θ b = 0 • (Fig.…”
mentioning
confidence: 99%
“…The action of the periodic modulation on electronic structure of graphene in Van der Waals heterostructures includes both changes of on-site electrostatic potential and modulation of metrics via the change of hopping parameters [32,33]. The models of homogeneous lattices take into account only the second effect.…”
Section: Introductionmentioning
confidence: 99%