Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition

Lim, Joo Weon; Mimura, Kouji; Miyake, Kiyoshi; Yamashita, Mutsuo; Isshiki, Minoru

doi:10.1143/jjap.42.2780

Cited by 22 publications

(13 citation statements)

References 7 publications

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“…In the previous paper, 5) island-like lumps were observed on the surface of the Cu/Ta/Si structure annealed at 650 C for 60 min. To confirm the nature of these lumps, Cu(100 nm)/ Ta(50 nm)/Si structure was annealed at 650 C in H 2 atmosphere for 60 min and analyzed using EPMA.…”

Section: Resultsmentioning

confidence: 87%

“…After 20 min, several new peaks appeared at around 23 and 29 , which correspond to CuTa 10 O 26 . Lim et al 5) reported that the CuTa 10 O 26 may be composed of CuOÁ5Ta 2 O 5 and the formation process is proposed as following. Exposed tantalum surface oxidizes at first during the annealing.…”

Section: Resultsmentioning

confidence: 99%

“…In the case of the Cu/Ta/Si structure, we reported a sudden rise of the resistivity during thermal annealing at 650 C, 5) which was probably caused by agglomeration of copper thin film. A similar phenomenon was observed on Ta/Si surface annealed at 630 C by Holloway et al…”

Section: Introductionmentioning

confidence: 90%

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Agglomeration of Copper Thin Film in Cu/Ta/Si Structure

et al. 2004

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Copper agglomeration in Cu(100 nm)/Ta(50 nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650 C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

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Agglomeration of Copper Thin Film in Cu/Ta/Si Structure

et al. 2004

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“…6) A base pressure of 3 Â 10 À5 Pa in the deposition chamber is obtained using a turbo molecular pump. A rod shaped Hf target is chemically polished to eliminate surface contamination, and then pre-sputtered for 30 min to remove a contaminated surface layer prior to deposition.…”

Section: Methodsmentioning

confidence: 99%

Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method

et al. 2006

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Hf films have been deposited on Si(100) substrate with or without a substrate bias voltage using a non-mass separated ion beam deposition (IBD) method. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) have been used to determine impurity concentrations of Hf films and a Hf target. By the SIMS results with Cs þ and O 2 þ ion beams, the Hf film deposited at V s ¼ 0 V contains more impurities than the Hf film deposited at V s ¼ À50 V. In addition, from GDMS results for the Hf target and the Hf films deposited at V s ¼ 0 and À50 V, almost all the impurities have reduced by applying a negative substrate bias voltage. It means that applying a negative bias voltage to the substrate can decrease the impurity concentrations in Hf films.

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“…1,2) However, there are some problems in fabrication process, for example, surface oxidation of copper. 3,4) Furthermore, copper base alloys are used for electrical parts such as lead frame and connector, and surface stabilization of them is required for applying them to microelectronics. Several studies on oxidation of Cu alloys have been performed, and Al, Ti and Cr have been reported to be useful as alloying elements for improving the oxidation resistance of copper.…”

Section: Introductionmentioning

confidence: 99%

Improvement in Oxidation Resistance of Cu-Al Dilute Alloys by Pre-annealing in H<SUB>2</SUB> and Ar Atmospheres

et al. 2005

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The formation of protective Al 2 O 3 thin layers on Cu-Al dilute alloys and their effect on the oxidation resistance has been investigated at high temperatures. Since selective and preferential oxidation of Al in Cu-Al alloys would take place under the very low oxygen pressures, Cu-Al (Al: 0:22 mass%) alloys were annealed at various temperatures in H 2 and/or Ar atmosphere. Continuous stable Al 2 O 3 thin layers were formed on the specimens annealed in Ar after H 2 annealing. Owing to the protective thin Al 2 O 3 layers, the high temperature oxidation rates decreased to about 1/20 to 1/40 times lower than that of pure Cu.

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Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition

Cited by 22 publications

References 7 publications

Agglomeration of Copper Thin Film in Cu/Ta/Si Structure

Agglomeration of Copper Thin Film in Cu/Ta/Si Structure

Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method

Improvement in Oxidation Resistance of Cu-Al Dilute Alloys by Pre-annealing in H<SUB>2</SUB> and Ar Atmospheres

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