Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF<sub>6</sub>/O<sub>2</sub> plasma

Sakai, Itsuko; Yahashi, K.; Shimonishi, Satoshi; Sekine, Makoto; Hori, Masaru

doi:10.7567/jjap.57.098004

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…104) The reason for the undercut is assumed to be that the thickness of the sidewall deposition film was insufficient to protect the Si sidewall. 105) Depositing a thick film for protection may suppress the undercut, but this would result in a tapered DT profile. Therefore, one method to suppress the undercut is improving the protection performance of the sidewall deposition film without increasing its thickness.…”

Section: Arde On Simentioning

confidence: 99%

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Iwase

Kamaji

Kang

et al. 2019

Jpn. J. Appl. Phys.

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Dramatic advances are being made in dry processing technologies. Atomic scale precision below 10 nm is now possible with fine patterning technologies for high-volume manufacturing of semiconductor devices. The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. Here we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to fine pattern transfer, HAR feature formation, and multiple patterning as lithographic techniques. Finally, we address the major challenges shared across the plasma science and technology community.

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Section: Arde On Simentioning

confidence: 99%

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Iwase

Kamaji

Kang

et al. 2019

Jpn. J. Appl. Phys.

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Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma

Hsiao

Britun

Nguyen

et al. 2023

Vacuum

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Future of plasma etching for microelectronics: Challenges and opportunities

Oehrlein,

Brandstadter,

Bruce

et al. 2024

Journal of Vacuum Science &Amp; Technology B

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Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

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Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF₆/O₂ plasma

Cited by 3 publications

References 19 publications

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma

Future of plasma etching for microelectronics: Challenges and opportunities

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Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF6/O2 plasma

Cited by 3 publications

References 19 publications

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma

Future of plasma etching for microelectronics: Challenges and opportunities

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Product

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Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF₆/O₂ plasma