“…The preferred orientation and forming temperature of cobalt silicide depend upon the film synthesis method and processing conditions. Among the cobalt silicides, stable cobalt disilicide (CoSi 2 ), which has a fluorite (CaF 2 ) structure and a lattice constant of 5.365 Å, has been widely investigated as an attractive contact material in nanoelectronic devices, due to the low resistance (14 mU cm) and small lattice mismatch with (À1.2%) Si [3]. Another compound CoSi, with a FeSi-type simple cubic structure and lattice parameter of 4.438 Å, has also been widely investigated as a novel electrochemical hydrogen storage alloy [4].…”