Effect of Substrate Temperature on the Structural and Optical Properties of Nanocrystalline Cadmium Selenide Thin Films Prepared by Electron Beam Evaporation Technique

Kissinger, N. J. Suthan; Suthagar, J.; Kumar, B. Saravana; Balasubramaniam, T.; Perumal, K.

doi:10.12693/aphyspola.118.623

Cited by 21 publications

(5 citation statements)

References 22 publications

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“…A similar result was reported by Mathuri et al up to a substrate temperature of 150 °C through the electron beam evaporation route [42]. The predominant (002) peak was also observed in the electron beam deposited CdSe thin films by Kissinger et al [43] and Murali et al [44].…”

Section: X-ray Diffraction Analysissupporting

confidence: 80%

See 1 more Smart Citation

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Kumar¹,

Valanarasu²,

Gunavathy

et al. 2022

Phys. Scr.

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The current work investigates the influence of the substrate temperature on the photodetection capability of cadmium selenide (CdSe) thin films deposited through economically viable thermal evaporation technique on glass substrates. The substrate temperature varied from room temperature (30 °C to 250 °C). The existence of a single-phase of hexagonal structured CdSe was established from XRD patterns with dominant peaks along the (002) plane in all the samples. The SEM micrographs show the homogeneous surface of the films without any pinholes. The bandgap of the films was found to vary with the variation in the substrate temperature and the sample fabricated at 200°C substrate temperature showed a bandgap of 2.00 eV. The light-dependent electrical analysis is also made to reveal the photodetection capability of the deposited CdSe films. The 200°C deposited CdSe film exhibits a higher responsivity of 8.07×10-2 A/Wand a maximum detectivity of 6.66×109 Jones. The external quantum efficiency (EQE) was found to rise with the substrate temperature and a maximum value of 18.8 % for the 200 °C deposited sample. The observed rise and decay times show a rapid response when the incident light intensity is changed from 1 to 5mW/cm2.

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Section: X-ray Diffraction Analysissupporting

confidence: 80%

“…In this study, the substrate temperature was varied from a temperature of 30 to 250 °C to explore its properties for enhanced photo-detection. The photo-detecting properties of the prepared films in our current work were found to be better than most of the existing literature [36][37][38].…”

Section: Introductioncontrasting

confidence: 45%

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Kumar¹,

Valanarasu²,

Gunavathy

et al. 2022

Phys. Scr.

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“…The values of the strain of CdS and CdS:Sn thin films are given in Table 2. It is clear from this table that the strain in CdS and CdS:Sn thin films increases with increasing in Sn concentration which can be also deduced from the decreasing in the grain size , where the increasing in the strain and the dislocation density with the decreasing in the grain size is a well-known phenomenon [19].…”

Section: Results and Discussion 1 Structural Propertiesmentioning

confidence: 70%

Structural and optical properties of CdS:Sn thin films prepared by chemical spray pyrolysis method

Ghdeeb¹

2019

IJP

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CdS and CdS:Sn thin films were successfully deposited on glasssubstrates by spray pyrolysis method. The films were grown atsubstrate temperatures 300 C°. The effects of Sn concentration on thestructural and optical properties were studied.The XRD profiles showed that the films are polycrystalline withhexagonal structure grown preferentially along the (002) axis. Theoptical studies exhibit direct allowed transition. Energy band gapvary from 3.2 to 2.7 eV.

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“…where D is the grain size. The lattice constant for the hexagonal phase of MgSe:Eu was estimated from the relation given by [21][22]:…”

Section: Structural Characterization Of Mgse:eu Films X-ray Diffractimentioning

confidence: 99%

Growth of Europium-Doped Magnesium Selenide Films by Electric Field-Assisted Spray Pyrolysis: Optical and Structural Analysis

Jeroh

Ikeuba

Okoli

2018

EEJP

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Europium-doped MgSe films were deposited via electric field-assisted spray pyrolysis. The dopant concentration of the bulk solution of europium trioxide was 5wt. %. However, for doping the films at different substrate temperatures, volume percentage (vol. %) was employed at each instance of variation. Variation of spray temperature was around 573K and 673K (±0.3). Deposition occurred at optimized conditions. Spectra of absorption indicate poor absorption characteristics demonstrated by Europium-doped MgSe films in the ultra-violet region and very low absorption characteristics in the visible section. Absorption peaks were evident around 230nm, 240nm, 350nm and 365nm which confirmed defect states are inherent inside the crystal structure of the films. The films displayed high transparency and low reflection in the visible section at varying substrate temperatures. The high transparency revealed by the MgSe:Eu films in the visible section of the electromagnetic spectrum makes the material applicable as a coating layer in the manufacturing of transparent products. Band gap energies within the range of 2.49eV to 2.95eV corresponding to varying substrate temperatures (573K, 598K, 623K, 648K and 673K) and film thicknesses (2900nm, 2750nm, 2500nm, 2100nm and 200nm) were determined for the MgSe:Eu films. However, a clear observation shows that the band gaps of MgSe:Eu films are mainly dependent on thickness such that the obtained band gaps decreased with increasing thickness (band gap increases with thickness reduction). Structural analysis (XRD) studied at 10% and 40% Eu concentrations reveals a hexagonal (or wurzite) structure for the films with a distortion in crystallinity at higher dopant concentration (40 vol. %) and a resultant blue shift in the lattice constant from the bulk value. Multiple planes of reflection from XRD pattern of the deposited MgSe:Eu films indicate clearly that the films are polycrystalline. Surface morphology (SEM) confirms the highly strained nature and the presence of defect states within the crystal lattice of the Europium-doped MgSe films. Composition of MgSe:Eu films obtained by energy dispersive analysis x-ray (EDAX) confirms the growth of MgSe:Eu films.

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Effect of Substrate Temperature on the Structural and Optical Properties of Nanocrystalline Cadmium Selenide Thin Films Prepared by Electron Beam Evaporation Technique

Cited by 21 publications

References 22 publications

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Structural and optical properties of CdS:Sn thin films prepared by chemical spray pyrolysis method

Growth of Europium-Doped Magnesium Selenide Films by Electric Field-Assisted Spray Pyrolysis: Optical and Structural Analysis

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