Effect of substrate-tilting angle-dependent grain growth and columnar growth in ZnO film deposited using radio frequency (RF) magnetron sputtering method

Sonklin, Thita; Dhanunjaya, M.; Leuasoongnoen, Pimchanok; Janphuang, Pattanapong; Pojprapai, Soodkhet

doi:10.1007/s10854-022-08576-0

Cited by 6 publications

(3 citation statements)

References 41 publications

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Section: Zno Piezoelectric Filmsmentioning

confidence: 99%

“…ZnO thin films can be made by blasting with an RF magnetron (Li et al, 2018;Sonklin et al, 2022;Algün et al, 2023;Cuadra et al, 2023;Kahveci et al, 2023;Murthy et al, 2023;Toma et al, 2023). {002} oriented Li-doped ZnO thin films on SiO 2 /Si was obtained using RF magnetron sputtering, when the sputtering power was 220 W and the Li-doped concentration was 5% (Sonklin et al, 2022). As shown in Figure 4F, nanoparticles of undoped zinc oxide (ZnO) and Sr x Zn 1-x (x = 0.01, 0.02, 0.03, 0.04, and 0.10) were synthesized using the sol-gel method (Algün et al, 2023), as shown in Figure 4F.…”

Section: Zno Piezoelectric Filmsmentioning

confidence: 99%

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Recent progress in piezoelectric thin films as self-powered devices: material and application

Song,

Hou,

Jiang

2024

Front. Mater.

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Piezoelectric materials have become a key component in sensors and actuators in many industrial fields, such as energy harvesting devices, self-powered structures, biomedical devices, nondestructive testing, owing to the novel properties including high piezoelectric coefficient and electromechanical coupling factors. Piezoelectric thin films integrated on silicon substrates are widely investigated for their high performance and low manufacturing costs to meet the requirement of sensor networks in internet of things (IoT). The aim of this work is to clarify the application and design structure of various piezoelectric thin films types, synthesis methods, and device processes. Based on latest literature, the process of fabricating thin film sensors is outlined, followed by a concise overview of techniques used in microelectromechanical systems (MEMS) processing that can integrate more complex functions to obtain relevant information in surrounding environment. Additionally, by addressing piezoelectric thin films sensors as a cutting-edge technology with the ability to produce self-powered electronic devices, this work delivers incisive conclusions on all aspects of piezoelectric sensor related features. A greater understanding of piezoelectricity is necessary regarding the future development and industry challenges.

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Section: Zno Piezoelectric Filmsmentioning

confidence: 99%

Section: Zno Piezoelectric Filmsmentioning

confidence: 99%

Recent progress in piezoelectric thin films as self-powered devices: material and application

Song,

Hou,

Jiang

2024

Front. Mater.

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“…In addition, the anisotropy of the deposition chamber, e.g., the angular distribution of the sputtered atoms, the substrate tilt, and the temperature gradient across the 8 in. SiO 2 /Si wafer, may also contribute to the gradual tilt of the Pt(111) grains away from center of the wafer. , Further, the impact of epitaxial Pt growth on GaN is apparent from the shape of the cutline ω profiles of the Pt(111) reflections. The cutline profiles can be well-fitted by two functions corresponding to the highly oriented and slightly inclined regions, according to Miyake et al In contrast to the 50 and 100 nm epi-Pt on GaN, the combined fit of the Pt(111) reflection profile of the 10 nm film exhibits a larger fraction of the highly oriented region.…”

Section: Results and Discussionmentioning

confidence: 99%

A Comparative Study of Pt/Al_0.72Sc_0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

Islam,

Schönweger,

Wolff

et al. 2023

ACS Appl. Mater. Interfaces

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Al x Sc 1−x N is a nitride-ferroelectric compatible with both CMOS and GaN technology. The origin of ferroelectricity in these ternary nitrides relies on the full inversion of nitrogen atom positions, which is a significantly different structural mechanism than conventional perovskites. Therefore, its ferroelectric characteristics exhibit a high remanent polarization and a tunable coercive field but suffer heavily from leakage currents during the switching event. In this article, we studied epitaxially grown Al 0.72 Sc 0.28 N thin films on epitaxial Pt electrode layers deposited on GaN/Al 2 O 3 substrates. The results are compared both structurally and electrically with similar systems on SiO 2 /Si substrates. Our X-ray diffraction analysis showed that Al 0.72 Sc 0.28 N/epi-Pt/GaN is always a complete epitaxial stack without any significant strain gradient. Electrically, this system has an overall lower leakage current and coercive field compared to directly grown, highly crystalline, strained epitaxial Al 0.72 Sc 0.28 N/ GaN, despite having a lower crystalline quality of the ferroelectric layer. In addition, decreasing the epi-Pt thickness from 100 to 10 nm resulted in further improvement of the leakage profile, which we attribute to a decrease in surface roughness in the thinner Pt. In contrast, the dominant factor of leakage in a fiber-textured system on Si substrates is the Pt(111) texture. Finally, with the combination of in-plane X-ray diffraction and high-resolution scanning transmission electron microscopy, we have demonstrated an all-epitaxial 20 nm Al 0.72 Sc 0.28 N/Pt/GaN MFM stack with a sharp interface thickness of less than 1 nm.

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Microstructural characterization and physical properties of transparent conducting magnesium–titanium co-doped zinc oxide thin films

Long

Chen

et al. 2022

J Mater Sci: Mater Electron

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Effect of substrate-tilting angle-dependent grain growth and columnar growth in ZnO film deposited using radio frequency (RF) magnetron sputtering method

Cited by 6 publications

References 41 publications

Recent progress in piezoelectric thin films as self-powered devices: material and application

Recent progress in piezoelectric thin films as self-powered devices: material and application

A Comparative Study of Pt/Al_0.72Sc_0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

Microstructural characterization and physical properties of transparent conducting magnesium–titanium co-doped zinc oxide thin films

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Effect of substrate-tilting angle-dependent grain growth and columnar growth in ZnO film deposited using radio frequency (RF) magnetron sputtering method

Cited by 6 publications

References 41 publications

Recent progress in piezoelectric thin films as self-powered devices: material and application

Recent progress in piezoelectric thin films as self-powered devices: material and application

A Comparative Study of Pt/Al0.72Sc0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

Microstructural characterization and physical properties of transparent conducting magnesium–titanium co-doped zinc oxide thin films

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A Comparative Study of Pt/Al_0.72Sc_0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates