CrystEngComm
 2024
DOI: 10.1039/d3ce00984j
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Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology

Guofeng Li,
Wei Hang,
Hongyu Chen
et al.

Abstract: This paper focuses on the generation and transformation of defects associated with subsurface damages (SSDs) in seed crystals during the physical vapor transport (PVT) growth of 4H-SiC crystals. SSDs in...

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